AS4C512M8D3L-12BCNTR

Product Overview

Category

AS4C512M8D3L-12BCNTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a memory component in various electronic devices such as computers, servers, and embedded systems.

Characteristics

• Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Organization: 8 Meg x 8 bits
• Speed: 12 nanoseconds (NS)
• Voltage: 2.5 Volts (V)
• Package: 60-ball FBGA (Fine-Pitch Ball Grid Array)
• Operating Temperature Range: -40°C to +85°C

Packaging/Quantity

AS4C512M8D3L-12BCNTR is typically packaged in trays or reels. The quantity per package depends on the manufacturer's specifications.

Specifications

• Clock Frequency: 83 MHz
• Burst Length: 8
• Refresh: Auto-refresh and self-refresh modes supported
• Power Supply: VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V
• Interface: Double Data Rate (DDR) with programmable CAS latency (CL)

Detailed Pin Configuration

The AS4C512M8D3L-12BCNTR module has a total of 60 pins. Here is the detailed pin configuration:

1. VSS (Ground)
2. DQ0 (Data Input/Output Bit 0)
3. DQ1 (Data Input/Output Bit 1)
4. DQ2 (Data Input/Output Bit 2)
5. DQ3 (Data Input/Output Bit 3)
6. DQ4 (Data Input/Output Bit 4)
7. DQ5 (Data Input/Output Bit 5)
8. DQ6 (Data Input/Output Bit 6)
9. DQ7 (Data Input/Output Bit 7)
10. VDDQ (Power Supply for Data I/O Buffers)
11. VSS (Ground)
12. VDD (Power Supply)
13. A0 (Address Bit 0)
14. A1 (Address Bit 1)
15. A2 (Address Bit 2)
16. A3 (Address Bit 3)
17. A4 (Address Bit 4)
18. A5 (Address Bit 5)
19. A6 (Address Bit 6)
20. A7 (Address Bit 7)
21. A8 (Address Bit 8)
22. A9 (Address Bit 9)
23. A10 (Address Bit 10)
24. A11 (Address Bit 11)
25. A12 (Address Bit 12)
26. A13 (Address Bit 13)
27. A14 (Address Bit 14)
28. A15 (Address Bit 15)
29. A16 (Address Bit 16)
30. A17 (Address Bit 17)
31. A18 (Address Bit 18)
32. A19 (Address Bit 19)
33. A20 (Address Bit 20)
34. BA0 (Bank Address Bit 0)
35. BA1 (Bank Address Bit 1)
36. RAS# (Row Address Strobe)
37. CAS# (Column Address Strobe)
38. WE# (Write Enable)
39. CS# (Chip Select)
40. VSS (Ground) 41-60. NC (No Connection)

Functional Features

The AS4C512M8D3L-12BCNTR module offers the following functional features:

1. High-speed data transfer: With a clock frequency of 83 MHz, it enables fast and efficient data transfer between the memory module and the system.
2. Large capacity: With a capacity of 512 Megabits, it provides ample storage space for storing and retrieving data.
3. Low power consumption: The module operates at a voltage of 2.5V, resulting in lower power consumption and improved energy efficiency.
4. Auto-refresh and self-refresh modes: It supports both auto-refresh and self-refresh modes, ensuring data integrity and reliability during extended periods of inactivity.

Advantages and Disadvantages

Advantages

• High-speed data transfer capability
• Large storage capacity
• Low power consumption
• Supports auto-refresh and self-refresh modes

Disadvantages

• Relatively slower compared to newer generations of DRAM modules
• Limited compatibility with older systems that do not support DDR interfaces

Working Principles

AS4C512M8D3L-12BCNTR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It