AS4C64M8D2-25BANTR

Product Overview

Category

AS4C64M8D2-25BANTR belongs to the category of semiconductor memory products.

Use

It is primarily used as a storage component in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed performance: AS4C64M8D2-25BANTR operates at a speed of 25 nanoseconds, ensuring quick data access.
• Large capacity: With a capacity of 64 megabits (8 megabytes), it provides ample storage space for various applications.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: AS4C64M8D2-25BANTR is available in a small form factor package, enabling easy integration into different devices.
• Reliable operation: It offers reliable data retention and endurance, ensuring long-term usage without data loss.

Packaging/Quantity

AS4C64M8D2-25BANTR is typically packaged in trays or reels. Each tray/reel contains a specific quantity of the product, usually ranging from hundreds to thousands, depending on customer requirements.

Specifications

• Part Number: AS4C64M8D2-25BANTR
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 64 Megabit x 8
• Operating Voltage: 3.3V
• Access Time: 25 nanoseconds
• Package Type: BGA (Ball Grid Array)
• Pin Count: 60 pins

Detailed Pin Configuration

The pin configuration of AS4C64M8D2-25BANTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. /CKE
41. /DQM0
42. /DQM1
43. /DM
44. VSS
45. VDD
46. NC
47. NC
48. NC
49. NC
50. NC
51. NC
52. NC
53. NC
54. NC
55. NC
56. NC
57. NC
58. NC
59. NC
60. VSS

Functional Features

• Synchronous Operation: AS4C64M8D2-25BANTR synchronizes its data transfer with an external clock signal, enabling efficient communication with the system.
• Burst Mode Support: It supports burst mode operation, allowing for consecutive data transfers without the need for individual commands.
• Auto Refresh: The product automatically performs periodic refresh operations to maintain data integrity.
• Power Down Mode: AS4C64M8D2-25BANTR features a power-down mode that reduces power consumption when the memory is not in use.
• Multiplexed Address/Data Bus: The address and data bus are multiplexed, optimizing the pin count and simplifying the system design.

Advantages and Disadvantages

Advantages

• High-speed performance ensures quick data access.
• Large capacity provides ample storage space for various applications.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package enables easy integration into different devices.
• Reliable operation ensures long-term usage without data loss.

Disadvantages

• Limited compatibility with older systems that do not support synchronous DRAM technology.
• Higher cost compared to some other memory technologies.

Working Principles

AS4C64M8D2-25BANTR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, which are periodically refreshed to maintain data integrity. The memory controller synchronizes data transfers with an external clock signal, allowing for efficient communication between the memory and the system.

Detailed Application Field Plans

AS4C64M8D2-