AS7C3513B-10JCN

Product Overview

Category

AS7C3513B-10JCN belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable performance

Package

AS7C3513B-10JCN is available in a compact and standardized package, making it compatible with various circuit designs.

Essence

The essence of AS7C3513B-10JCN lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of AS7C3513B-10JCN chips.

Specifications

• Part Number: AS7C3513B-10JCN
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Data Retention: More than 10 years
• Package Type: 32-pin plastic small outline integrated circuit (SOIC)

Detailed Pin Configuration

1. Vcc (Power Supply)
2. NC (No Connection)
3. A0-A18 (Address Inputs)
4. CE (Chip Enable)
5. OE (Output Enable)
6. WE (Write Enable)
7. I/O0-I/O7 (Data Inputs/Outputs)
8. GND (Ground)

Functional Features

• Fast access time allows for quick data retrieval.
• Low power consumption helps conserve energy.
• Easy integration into various circuit designs due to standardized package.
• Reliable performance ensures data integrity.

Advantages

• High-speed operation enables efficient data processing.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates extensive data requirements.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Higher cost compared to other memory technologies.
• Volatile memory requires constant power supply for data retention.
• Limited scalability in terms of storage capacity compared to other memory types.

Working Principles

AS7C3513B-10JCN utilizes static random access memory (SRAM) technology. It stores digital information using flip-flops, which retain their state as long as power is supplied. The address inputs specify the location where data is stored or retrieved. The chip enable (CE), output enable (OE), and write enable (WE) signals control the memory operations.

Detailed Application Field Plans

AS7C3513B-10JCN finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Mobile phones and tablets - Networking equipment - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. AS7C3512B-10JCN: Similar to AS7C3513B-10JCN but with a smaller storage capacity of 256K words x 8 bits.
2. AS7C3514B-10JCN: Similar to AS7C3513B-10JCN but with a larger storage capacity of 1M words x 8 bits.
3. AS7C3513B-15JCN: Similar to AS7C3513B-10JCN but with a slower access time of 15 ns.

(Note: This list is not exhaustive and there may be other alternative models available.)

In conclusion, AS7C3513B-10JCN is a high-speed, low-power, and reliable semiconductor memory device primarily used for data storage and retrieval in various electronic devices. Its compact package, large storage capacity, and compatibility make it a versatile choice for different applications. However, it is important to consider the cost and volatility of the memory when selecting AS7C3513B-10JCN or exploring alternative models.