Ampleon USA Inc.
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BLF573S,112
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BLF573S,112

Product Overview

Category

The BLF573S,112 belongs to the category of RF power transistors.

Use

It is used in high-power amplifiers for applications such as radio and television broadcasting, radar systems, and industrial heating equipment.

Characteristics

  • High power handling capability
  • Broadband operation
  • High efficiency
  • Excellent linearity

Package

The BLF573S,112 is typically available in a metal-ceramic package for enhanced thermal performance and reliability.

Essence

The essence of BLF573S,112 lies in its ability to deliver high power output with minimal distortion across a wide frequency range.

Packaging/Quantity

The transistor is usually supplied in reels or trays, with specific quantities per package depending on the manufacturer's specifications.

Specifications

  • Frequency Range: 470 - 860 MHz
  • Output Power: 350 W
  • Gain: 17 dB
  • Efficiency: 30%
  • Voltage: 32 V
  • Current: 15 A

Detailed Pin Configuration

The BLF573S,112 typically features a 3-pin configuration: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High power gain
  • Wide bandwidth
  • Robust construction for reliable operation in demanding environments

Advantages

  • High power handling capability
  • Suitable for broadband applications
  • Reliable and durable construction

Disadvantages

  • Higher cost compared to lower power alternatives
  • Requires careful thermal management due to high power dissipation

Working Principles

The BLF573S,112 operates based on the principles of bipolar junction transistors, utilizing its high power gain and efficiency to amplify RF signals while maintaining linearity.

Detailed Application Field Plans

  1. Broadcasting: Used in high-power transmitters for TV and radio broadcasting.
  2. Radar Systems: Employed in radar transmitters for long-range detection and tracking.
  3. Industrial Heating Equipment: Utilized in RF induction heating systems for industrial processes.

Detailed and Complete Alternative Models

  1. MRF151G
  2. BLF278
  3. MRFE6VP61K25H

In conclusion, the BLF573S,112 is a high-power RF transistor designed for demanding applications that require high efficiency and reliability. Its wide frequency range and robust construction make it suitable for various industries, including broadcasting, radar, and industrial heating. While it offers significant advantages in terms of power handling and linearity, careful consideration of cost and thermal management is necessary when choosing this transistor for specific applications.

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Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням BLF573S,112 у технічних рішеннях

  1. What is the maximum power output of BLF573S,112?

    • The maximum power output of BLF573S,112 is 160 watts.

  2. What is the frequency range for BLF573S,112?

    • BLF573S,112 operates in the frequency range of 470-860 MHz.

  3. What is the typical gain of BLF573S,112?

    • The typical gain of BLF573S,112 is around 17 dB.

  4. What are the recommended operating conditions for BLF573S,112?

    • BLF573S,112 should be operated at a supply voltage of 32 V and a quiescent current of 150 mA.

  5. Is BLF573S,112 suitable for broadband applications?

    • Yes, BLF573S,112 is suitable for broadband applications due to its wide frequency range.

  6. What is the thermal resistance of BLF573S,112?

    • The thermal resistance of BLF573S,112 is typically 0.9°C/W.

  7. Does BLF573S,112 require external matching networks?

    • Yes, BLF573S,112 requires external matching networks for optimal performance.

  8. Can BLF573S,112 be used in high-power RF amplifiers?

    • Yes, BLF573S,112 is designed for use in high-power RF amplifiers.

  9. What are the typical applications for BLF573S,112?

    • Typical applications for BLF573S,112 include TV transmitters, digital broadcasting, and other high-power RF systems.

  10. What are the key features of BLF573S,112 that make it suitable for technical solutions?

    • BLF573S,112 features high power output, wide frequency range, and excellent linearity, making it ideal for various technical solutions requiring high-performance RF amplification.