BLF8G27LS-140,118

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: Surface Mount - Essence: Power Amplification - Packaging/Quantity: Tape and Reel

Specifications: - Frequency Range: 800 MHz to 2.7 GHz - Power Output: 8 Watts - Voltage: 28V - Gain: 14 dB - Efficiency: 55%

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: Bias

Functional Features: - High Power Amplification - Wide Frequency Range - Low Distortion - High Efficiency

Advantages: - Suitable for Broadband Applications - Compact Surface Mount Package - High Power Output

Disadvantages: - Requires Precise Biasing - Sensitive to Voltage Fluctuations

Working Principles: The BLF8G27LS-140,118 operates on the principle of amplifying radio frequency signals using a combination of active and passive components. The input signal is amplified and delivered to the output with minimal distortion and high efficiency.

Detailed Application Field Plans: - Cellular Base Stations - Radar Systems - Wireless Communication Equipment

Detailed and Complete Alternative Models: - BLF6G27LS-140,112 - BLF8G30LS-140,118 - BLF8G30LS-160,118

This RF power transistor, BLF8G27LS-140,118, is widely used in various applications due to its high power output, wide frequency range, and compact package. It is suitable for use in cellular base stations, radar systems, and wireless communication equipment. While it offers advantages such as high power output and suitability for broadband applications, it requires precise biasing and is sensitive to voltage fluctuations. Alternative models such as BLF6G27LS-140,112, BLF8G30LS-140,118, and BLF8G30LS-160,118 provide similar functionality and can be considered based on specific application requirements.

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