S34ML04G200TFI000

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Integrated circuit chip
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Available in various packaging options (e.g., tape and reel), quantity depends on customer requirements

Specifications

• Capacity: 4 gigabytes (GB)
• Interface: Serial Peripheral Interface (SPI)
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read Speed: Up to 108 megabytes per second (MB/s)
• Write Speed: Up to 20 megabytes per second (MB/s)
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The S34ML04G200TFI000 flash memory chip has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends ongoing operations
4. WP: Write protect
5. SIO0: Serial input/output data line
6. SIO1: Serial input/output data line
7. SIO2: Serial input/output data line
8. SIO3: Serial input/output data line
9. CE#: Chip enable
10. CLE: Command latch enable
11. ALE: Address latch enable
12. RE# or RY/BY#: Ready/Busy status output
13. WE#: Write enable
14. RESET#: Reset input
15. RB#: Ready/Busy status output
16. NC: No connection

Functional Features

• High-speed data transfer with SPI interface
• Efficient power management for low energy consumption
• Error correction and detection mechanisms for data integrity
• Advanced wear-leveling algorithms for extended lifespan
• Security features like hardware write protection and secure erase

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Low power consumption - Reliable data retention - Enhanced security features

Disadvantages: - Relatively higher cost compared to other memory options - Limited endurance compared to some alternative models

Working Principles

The S34ML04G200TFI000 flash memory utilizes a floating-gate transistor technology to store data. It operates based on the principles of electrical charge trapping and release within the floating gate. When a voltage is applied, electrons are trapped in the floating gate, representing a binary value (0 or 1). These charges can be read, written, or erased using specific electrical signals.

Detailed Application Field Plans

The S34ML04G200TFI000 flash memory chip finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - Digital cameras - Mobile phones - Tablets - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. S34ML02G100TFI000: 2GB capacity, similar specifications
2. S34ML08G400TFI000: 8GB capacity, similar specifications
3. S34ML16G800TFI000: 16GB capacity, similar specifications

These alternative models provide different storage capacities while maintaining similar characteristics and functionality to the S34ML04G200TFI000.

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