STK10C68-5C45M

Product Overview

Category

STK10C68-5C45M belongs to the category of non-volatile static random access memory (nvSRAM).

Use

This product is primarily used for data storage in applications that require both non-volatility and high-speed read/write operations.

Characteristics

• Non-volatile: The STK10C68-5C45M retains data even when power is removed.
• High-speed operation: It offers fast read and write access times, comparable to traditional SRAM.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.
• High endurance: The STK10C68-5C45M can withstand a large number of read and write cycles without degradation.
• Wide temperature range: It can operate reliably over a wide temperature range, making it suitable for harsh environments.

Package

The STK10C68-5C45M is available in a compact surface-mount package, allowing for easy integration into various electronic systems.

Essence

The essence of this product lies in its ability to combine the benefits of non-volatility with the high-speed performance of SRAM.

Packaging/Quantity

The STK10C68-5C45M is typically packaged in reels or trays, with a quantity of 1000 units per reel/tray.

Specifications

• Memory capacity: 64 kilobits (8 kilobytes)
• Supply voltage: 3.0V to 3.6V
• Operating temperature range: -40°C to +85°C
• Data retention: More than 10 years
• Endurance: Up to 1 million write cycles

Detailed Pin Configuration

The STK10C68-5C45M has a total of 28 pins. The pin configuration is as follows:

1. VCC
2. GND
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. CE#
12. OE#
13. WE#
14. NC
15. DQ0
16. DQ1
17. DQ2
18. DQ3
19. DQ4
20. DQ5
21. DQ6
22. DQ7
23. VBAT
24. VCAP
25. NC
26. NC
27. NC
28. NC

Functional Features

• Non-volatility: The STK10C68-5C45M retains data even when power is removed, ensuring data integrity.
• High-speed operation: It offers fast read and write access times, allowing for efficient data processing.
• Low power consumption: The device operates at low power levels, extending battery life in portable applications.
• Easy integration: The STK10C68-5C45M can be easily integrated into existing systems due to its standard SRAM interface.

Advantages and Disadvantages

Advantages

• Non-volatile storage capability
• High-speed read and write operations
• Low power consumption
• Wide temperature range operation
• High endurance

Disadvantages

• Relatively small memory capacity compared to other non-volatile memory options
• Higher cost compared to traditional SRAM

Working Principles

The STK10C68-5C45M combines a volatile SRAM array with a non-volatile ferroelectric random access memory (FeRAM) element. When data is written to the device, it is stored in the FeRAM element, which retains the information even when power is removed. During read operations, the data is accessed from the SRAM array, providing high-speed access times.

Detailed Application Field Plans

The STK10C68-5C45M finds applications in various fields where non-volatile data storage with high-speed access is required. Some potential application areas include:

1. Industrial control systems
2. Automotive electronics
3. Medical devices
4. Aerospace and defense systems
5. Communication equipment

Detailed and Complete Alternative Models

1. STK10C68-5C45N: Similar to STK10C68-5C45M, but with a different package option.
2. STK10C68-5C45R: Enhanced version with extended temperature range (-40°C to +125°C).
3. STK10C68-5C45L: Low-power variant with reduced power consumption.

These alternative models offer similar functionality and can be considered based on specific application requirements.

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