DDTA123YE-7-F Product Overview

Introduction

DDTA123YE-7-F is a semiconductor product belonging to the category of transistors. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Transistor
• Use: Amplification and switching of electronic signals
• Characteristics: High gain, low noise, and low power consumption
• Package: SOT-23
• Essence: NPN bipolar junction transistor
• Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

• Maximum Power Dissipation: 250mW
• Collector-Base Voltage (VCBO): 50V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• DC Current Gain (hFE): 100 - 300
• Transition Frequency (fT): 250MHz

Detailed Pin Configuration

The DDTA123YE-7-F transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed
• Small package size

Advantages and Disadvantages

Advantages

• High gain
• Low noise
• Low power consumption
• Small form factor

Disadvantages

• Limited maximum power dissipation
• Limited collector current

Working Principles

The DDTA123YE-7-F operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

The DDTA123YE-7-F is suitable for various applications including: - Audio amplification circuits - Signal amplification in communication systems - Switching circuits in electronic devices

Detailed and Complete Alternative Models

Some alternative models to DDTA123YE-7-F include: - BC547 - 2N2222 - 2N3904 - S8050

In conclusion, the DDTA123YE-7-F transistor offers high gain, low noise, and low power consumption, making it suitable for a wide range of electronic applications.

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