BC849CWE6327HTSA1

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification of electrical signals - Characteristics: Small signal NPN transistor, low power, high voltage - Package: SOT323 - Essence: Silicon NPN epitaxial planar transistor - Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications: - Collector-Emitter Voltage (VCEO): 30V - Collector-Base Voltage (VCBO): 30V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (Ptot): 250mW - Transition Frequency (fT): 200MHz - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: The BC849CWE6327HTSA1 transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features: - High current gain - Low noise - Suitable for high-speed switching applications

Advantages: - Small package size - High transition frequency - Low power consumption

Disadvantages: - Limited collector current capability - Limited power dissipation

Working Principles: The BC849CWE6327HTSA1 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans: This transistor is commonly used in audio amplifiers, signal processing circuits, and high-frequency oscillators due to its small size and high transition frequency.

Detailed and Complete Alternative Models: - BC847CWE6327HTSA1 - BC848CWE6327HTSA1 - BC850CWE6327HTSA1

This completes the entry for BC849CWE6327HTSA1, providing comprehensive information about its category, specifications, features, and application.