IPB80N06S2L11ATMA1

Introduction

The IPB80N06S2L11ATMA1 is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and performance.

Basic Information Overview

Category: Power MOSFET
Use: Power switching applications
Characteristics: High current capability, low on-resistance, fast switching speed
Package: TO-263-3 (D2PAK)
Essence: Efficient power management
Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier

Specifications

Voltage Rating: 60V
Current Rating: 80A
On-Resistance: 8.5 mΩ
Gate Charge: 40nC
Operating Temperature: -55°C to 175°C
Mounting Type: Surface Mount

Detailed Pin Configuration

The IPB80N06S2L11ATMA1 features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

Low on-resistance for minimal power dissipation
Fast switching speed for efficient power management
High current capability for robust performance

Advantages and Disadvantages

Advantages

High current handling capacity
Low on-resistance for reduced power loss
Fast switching speed for improved efficiency

Disadvantages

Sensitive to static electricity
Requires careful handling during assembly

Working Principles

The IPB80N06S2L11ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals, enabling efficient power switching.

Detailed Application Field Plans

The IPB80N06S2L11ATMA1 finds extensive use in various applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting - Automotive electronics

Detailed and Complete Alternative Models

IPB80P03P4L11ATMA1: P-channel power MOSFET with similar characteristics
IRFB7430PbF: Power MOSFET with comparable specifications
STP80NF03L: Alternative N-channel MOSFET option

In conclusion, the IPB80N06S2L11ATMA1 is a versatile power MOSFET with high current capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications.

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