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IPP260N06N3GXKSA1

IPP260N06N3GXKSA1

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-current applications
Characteristics: High current capability, low on-resistance, fast switching speed
Package: TO-220
Essence: Power transistor for efficient switching
Packaging/Quantity: Single unit

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 50A
  • On-Resistance (RDS(on)): 0.026 ohm
  • Gate-Source Voltage (VGS): ±20V
  • Total Power Dissipation (PD): 200W

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient operation
  • High current capability for demanding applications

Advantages and Disadvantages

Advantages: - High current handling capacity - Low on-resistance for reduced power loss - Fast switching speed for improved efficiency

Disadvantages: - Higher cost compared to standard MOSFETs - Larger package size may not be suitable for compact designs

Working Principles

The IPP260N06N3GXKSA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through, enabling efficient switching in various applications.

Detailed Application Field Plans

  1. Power Supplies: Used for high-current switching in AC-DC and DC-DC converters.
  2. Motor Control: Enables efficient switching in motor drive circuits for precise control.
  3. High-Current Applications: Suitable for applications requiring high current handling such as automotive systems and industrial equipment.

Detailed and Complete Alternative Models

  1. IRF3205: Similar specifications and package type
  2. STP55NF06L: Comparable characteristics and performance
  3. FDMS86181: Alternative with similar features and package style

This comprehensive entry provides an in-depth understanding of the IPP260N06N3GXKSA1 Power MOSFET, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням IPP260N06N3GXKSA1 у технічних рішеннях

  1. What is the maximum drain-source voltage rating of IPP260N06N3GXKSA1?

    • The maximum drain-source voltage rating of IPP260N06N3GXKSA1 is 60V.
  2. What is the continuous drain current rating of IPP260N06N3GXKSA1?

    • The continuous drain current rating of IPP260N06N3GXKSA1 is 120A.
  3. What is the on-state resistance (RDS(on)) of IPP260N06N3GXKSA1?

    • The on-state resistance (RDS(on)) of IPP260N06N3GXKSA1 is typically 0.0026 ohms.
  4. What is the maximum power dissipation of IPP260N06N3GXKSA1?

    • The maximum power dissipation of IPP260N06N3GXKSA1 is 300W.
  5. What are the typical applications for IPP260N06N3GXKSA1?

    • IPP260N06N3GXKSA1 is commonly used in applications such as motor control, power supplies, and DC-DC converters.
  6. What is the gate threshold voltage of IPP260N06N3GXKSA1?

    • The gate threshold voltage of IPP260N06N3GXKSA1 is typically 2V.
  7. Is IPP260N06N3GXKSA1 suitable for automotive applications?

    • Yes, IPP260N06N3GXKSA1 is suitable for automotive applications due to its high current and voltage ratings.
  8. What is the operating temperature range of IPP260N06N3GXKSA1?

    • IPP260N06N3GXKSA1 has an operating temperature range of -55°C to 175°C.
  9. Does IPP260N06N3GXKSA1 have built-in protection features?

    • IPP260N06N3GXKSA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
  10. Can IPP260N06N3GXKSA1 be used in parallel to increase current handling capability?

    • Yes, IPP260N06N3GXKSA1 can be used in parallel to increase current handling capability, but proper thermal management is essential to ensure balanced current sharing.