PTFA092211ELV4R250XTMA1

Product Overview

Category: RF Transistor
Use: Amplification of radio frequency signals
Characteristics: High power, high frequency, low noise
Package: SMD
Essence: Power amplification in RF circuits
Packaging/Quantity: 250 units per reel

Specifications

Frequency: 2.11 GHz
Voltage: 4V
Power Output: 250mW
Technology: GaN (Gallium Nitride)

Detailed Pin Configuration

Pin 1: RF Input
Pin 2: Ground
Pin 3: RF Output
Pin 4: Bias

Functional Features

High power gain
Low distortion
Wide bandwidth

Advantages and Disadvantages

Advantages

High power output
Low noise
Wide operating frequency range

Disadvantages

Higher cost compared to some alternatives
Sensitive to voltage fluctuations

Working Principles

The PTFA092211ELV4R250XTMA1 operates on the principle of amplifying radio frequency signals using Gallium Nitride technology, providing high power gain with low distortion.

Detailed Application Field Plans

This transistor is suitable for use in various RF applications such as: - Wireless communication systems - Radar systems - Satellite communication

Detailed and Complete Alternative Models

PTFA082201ELV4R200XTMA1
PTFA102211ELV4R300XTMA1
PTFA092211ELV4R250XTMB1

Note: The alternative models listed above are similar in function and performance but may have slight variations in specifications.

This information provides a comprehensive overview of the PTFA092211ELV4R250XTMA1 RF transistor, including its specifications, features, and application fields.