IS42S16100F-7BLI-TR

Product Overview

Category

IS42S16100F-7BLI-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data transfer rate
• Low power consumption
• Compact size
• Reliable performance
• Wide temperature range operation

Package

IS42S16100F-7BLI-TR is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16100F-7BLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S16100F-7BLI-TR is typically packaged in trays or reels and is available in various quantities depending on the customer's requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Clock Frequency: 143 MHz
• Access Time: 7 ns
• Interface: Parallel
• Package Type: SO-DIMM
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16100F-7BLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. VDD
46. VDD
47. VSS
48. VSS

Functional Features

• High-speed data transfer with low latency
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Multiple chip select options for flexible memory configuration

Advantages and Disadvantages

Advantages

• Fast data transfer rate enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Compact size allows for integration in space-constrained designs
• Reliable performance ensures data integrity and system stability
• Wide temperature range operation enables usage in various environments

Disadvantages

• Limited capacity compared to higher-end memory modules
• Higher cost per unit compared to other memory technologies
• Requires proper handling and installation to prevent damage

Working Principles

IS42S16100F-7BLI-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending commands and addresses to the memory module, which activates the appropriate row and column to read or write data.

Detailed Application Field Plans

IS42S16100F-7BLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Workstations - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

1. IS42S16320D-7TLI: 32 Megabit (4 Megabyte) SDRAM module with similar specifications.
2. MT48LC16M16A2P-75IT: 256 Megabit (32 Megabyte) SDRAM module with higher capacity.
3. K4S561632H-UC75: 128 Megabit (16 Megabyte) SDRAM module with lower power consumption.

These alternative models offer different capacities, power requirements, and performance characteristics to suit specific application requirements.

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