IS42S16160D-7B-TR

Product Overview

Category

IS42S16160D-7B-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact size
• Reliable performance

Package

IS42S16160D-7B-TR comes in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16160D-7B-TR lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

Typically, IS42S16160D-7B-TR is packaged in trays or reels, with each tray/reel containing a specific quantity of modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabytes (MB)
• Organization: 1M words x 16 bits
• Speed: 7 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS42S16160D-7B-TR follows a standard pin configuration for SO-DIMM modules. The detailed pinout is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. VDD
46. VDD
47. VSS
48. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Multiple chip select options for flexible memory configuration

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Large storage capacity allows for storing a significant amount of data.
• Low power consumption helps in reducing energy usage.
• Compact size enables easy integration into various electronic devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited capacity compared to newer generations of DRAM modules.
• Relatively slower data transfer rate compared to newer technologies.
• Incompatibility with certain older systems due to voltage requirements.

Working Principles

IS42S16160D-7B-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending specific commands and addresses to the module, which activates the corresponding rows and columns to read or write data.

Detailed Application Field Plans

IS42S16160D-7B-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Printers - Industrial control systems - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS42S16160D-7B-TR include: - MT48LC16M16A2P-75: 16 Megabytes (MB) SDRAM module with a speed of 7.5 nanoseconds (ns). - K4S561632H-UC75: 16 Megabytes (MB) SDRAM module with a speed of 7.5 nanoseconds (ns). - HYB39S16160T-7: 16 Megabytes (MB) S