IS42S16800E-75EBLI

Product Overview

Category

IS42S16800E-75EBLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

It is primarily used as a memory component in electronic devices such as computers, laptops, servers, and other computing systems.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact form factor for easy integration into various devices

Package

IS42S16800E-75EBLI is typically packaged in a small outline dual in-line memory module (SODIMM) format. This package allows for easy installation and removal from compatible devices.

Essence

The essence of IS42S16800E-75EBLI lies in its ability to provide reliable and efficient memory storage for electronic devices, ensuring smooth operation and enhanced performance.

Packaging/Quantity

IS42S16800E-75EBLI is commonly available in retail packaging, with each unit containing a single memory module.

Specifications

• Memory Type: DDR2 SDRAM
• Capacity: 1 GB
• Speed: 667 MHz
• Data Transfer Rate: 5,300 MB/s
• Voltage: 1.8V
• Pin Count: 200
• CAS Latency: CL5
• Form Factor: SODIMM

Detailed Pin Configuration

The pin configuration of IS42S16800E-75EBLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. BA0
37. BA1
38. RAS#
39. CAS#
40. WE#
41. VSS
42. CK0
43. CK#0
44. CKE0
45. ODT0
46. CS0#
47. DM0
48. VSS
49. VDD
50. VDD

(Note: The pin configuration continues beyond pin 50, but only the first 50 pins are listed here for brevity.)

Functional Features

• High-speed data access and transfer
• Support for burst mode operations
• Auto-refresh capability for maintaining data integrity
• Low power consumption
• On-die termination (ODT) for improved signal quality
• Error correction code (ECC) support for enhanced reliability

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Compact form factor
• Low power consumption
• ECC support for improved reliability

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other memory types
• Limited compatibility with older devices

Working Principles

IS42S16800E-75EBLI operates based on the principles of DDR2 SDRAM technology. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory controller sends commands to read from or write to specific memory locations, and the data is accessed and transferred accordingly.

Detailed Application Field Plans

IS42S16800E-75EBLI finds applications in various fields, including: 1. Personal computers 2. Laptops and notebooks 3. Servers 4. Workstations 5. Networking equipment 6. Embedded systems 7. Industrial automation 8. Medical devices 9. Gaming consoles 10. Mobile devices (with compatible memory slots)

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS42S16800E-75EBLI are: 1. IS42S16160D-7TLI 2. MT47H64M16HR-25EIT:H 3. K4B2G1646F-BCK0 4. H5TC4G63CFR-PBA 5. M471A1K43CB1-CRC

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