IS42S32160B-75BL-TR

Product Overview

Category

IS42S32160B-75BL-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and other computing systems that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32160B-75BL-TR is available in a small outline dual in-line memory module (SODIMM) package. This compact form factor allows for easy integration into various electronic devices.

Essence

The essence of IS42S32160B-75BL-TR lies in its ability to provide fast and efficient data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS42S32160B-75BL-TR is typically packaged in trays or reels, with each containing a specific quantity of modules. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR SDRAM
• Capacity: 512MB
• Organization: 32M words × 16 bits
• Operating Voltage: 2.5V ± 0.2V
• Clock Frequency: 133MHz
• Interface: Parallel
• Refresh Rate: 7.8μs / 64ms
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32160B-75BL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. VSS
46. VDD

Functional Features

• High-speed data transfer: IS42S32160B-75BL-TR offers fast data transfer rates, enabling quick access to stored information.
• Low power consumption: This module is designed to operate efficiently while consuming minimal power, making it suitable for battery-powered devices.
• Error correction: It incorporates error correction techniques to ensure data integrity and reliability.
• Burst mode operation: IS42S32160B-75BL-TR supports burst mode, allowing for efficient sequential data retrieval.

Advantages and Disadvantages

Advantages

• Fast and efficient data storage and retrieval
• Compact form factor for easy integration
• Low power consumption
• Reliable performance
• Error correction capabilities

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to alternative memory options

Working Principles

IS42S32160B-75BL-TR operates based on the principles of dynamic random access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. The memory controller sends commands and addresses to access specific data stored in the memory array.

Detailed Application Field Plans

IS42S32160B-75BL-TR finds applications in various electronic devices that require high-speed data storage and retrieval. Some potential application fields include: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Industrial automation systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS42S32160B-75BL-TR are: - MT47H64M16HR-25E: 512MB DDR3 SDRAM module with comparable specifications. - K4B1G1646G-BCH9: 1GB DDR3 SDRAM module with higher capacity. - AS4C32M16SB-7TCN: 512MB SDRAM module with lower