IS42S83200G-7TLI-TR

Product Overview

Category

IS42S83200G-7TLI-TR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact size

Package

IS42S83200G-7TLI-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S83200G-7TLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in reels and comes in quantities of 2500 units per reel.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 256 Megabits (32 Megabytes)
• Organization: 8M words x 32 bits x 4 banks
• Operating Voltage: 3.3V
• Access Time: 7 nanoseconds
• Refresh Rate: 64ms/8192 cycles
• Interface: Parallel

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. DQM0
21. DQM1
22. CAS
23. RAS
24. WE
25. CS
26. CKE
27. A0
28. A1
29. A2
30. A3
31. A4
32. A5
33. A6
34. A7
35. VSS
36. A8
37. A9
38. A10
39. A11
40. A12
41. A13
42. A14
43. A15
44. VDD
45. NC
46. NC
47. NC
48. VSS

Functional Features

• Burst mode operation for faster data transfer
• Auto-refresh and self-refresh modes for power-saving
• Internal pipelined architecture for improved performance
• On-die termination (ODT) for signal integrity

Advantages and Disadvantages

Advantages

• High-speed data access allows for quick processing of information.
• Large storage capacity enables the handling of extensive data sets.
• Low power consumption helps prolong battery life in portable devices.
• Compact size facilitates integration into various electronic devices.

Disadvantages

• Sensitive to electrical noise, requiring proper shielding and grounding.
• Relatively higher cost compared to other memory technologies.
• Limited endurance due to the finite number of write cycles.

Working Principles

IS42S83200G-7TLI-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into banks, allowing for parallel access to multiple data locations. Data is read from or written to the memory by sending appropriate commands and addresses through the interface.

Detailed Application Field Plans

IS42S83200G-7TLI-TR finds applications in a wide range of electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Mobile phones and tablets 5. Gaming consoles 6. Automotive electronics 7. Industrial control systems

Detailed and Complete Alternative Models

1. IS42S16160D-7TLI: 16 Megabit (2 Megabyte) SDRAM chip with similar specifications.
2. IS45S16400F-7TLA1: 64 Megabit (8 Megabyte) SDRAM chip with comparable features.
3. MT48LC32M16A2P-75: 512 Megabit (64 Megabyte) SDRAM chip with higher capacity.

These alternative models offer varying capacities and performance levels to suit different application requirements.

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