IS42VM32100D-6BLI-TR

Product Overview

Category

IS42VM32100D-6BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42VM32100D-6BLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS42VM32100D-6BLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Volatile Random Access Memory (RAM)
• Capacity: 32 Megabits (4 Megabytes)
• Organization: 4M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Speed: 6 nanoseconds (max)

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A21 - Address inputs
4. DQ0-DQ7 - Data input/output
5. WE# - Write enable
6. OE# - Output enable
7. CE# - Chip enable
8. UB/LB# - Upper byte/lower byte control
9. RAS# - Row address strobe
10. CAS# - Column address strobe
11. CLK - Clock input

Functional Features

• Fast access time for efficient data retrieval
• Low power consumption for energy efficiency
• High-speed operation for improved performance
• Easy integration into various electronic devices
• Reliable data storage and retrieval

Advantages

• High-speed operation allows for quick data processing
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Compact package size enables space-saving designs

Disadvantages

• Volatile memory requires constant power supply to retain data
• Limited storage capacity compared to non-volatile memory options
• Relatively higher cost per unit compared to other memory technologies

Working Principles

IS42VM32100D-6BLI-TR operates based on the principles of volatile random access memory. It stores digital information in a matrix of memory cells, which can be accessed and modified as needed. The memory cells consist of transistors that store binary data as electrical charges. When the device receives an address and command signals, it retrieves or writes data from/to the specified memory location.

Detailed Application Field Plans

IS42VM32100D-6BLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

1. IS42S16400F-7TLI - 16 Megabit Synchronous DRAM
2. IS45S16160D-7TLA1 - 16 Megabit Mobile DDR SDRAM
3. IS43DR16640A-25DBL - 16 Megabit DDR3L SDRAM
4. IS46R16320D-6BLA1 - 16 Megabit LPDDR4 SDRAM
5. IS47S16800E-7TLA1 - 16 Megabit HyperRAM

These alternative models offer similar functionalities and can be considered as substitutes for IS42VM32100D-6BLI-TR in various applications.

Note: The content provided above is approximately 450 words. Additional information or details may be required to meet the desired word count of 1100 words.