IS43DR16640B-3DBI-TR

Product Overview

Category

IS43DR16640B-3DBI-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Non-volatile storage
• Low power consumption
• Compact size

Package

IS43DR16640B-3DBI-TR is packaged in a small form factor, making it suitable for integration into various electronic devices.

Essence

The essence of IS43DR16640B-3DBI-TR lies in its ability to provide fast and reliable data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically sold in bulk packaging, with quantities varying based on customer requirements.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 16 gigabits (2 gigabytes)
• Speed: 3.2 gigabits per second
• Voltage: 1.2 volts
• Interface: Double Data Rate 4 (DDR4)
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS43DR16640B-3DBI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. DQS0
20. DQS1
21. DM0
22. DM1
23. BA0
24. BA1
25. A0
26. A1
27. A2
28. A3
29. A4
30. A5
31. A6
32. A7
33. A8
34. A9
35. A10
36. A11
37. A12
38. A13
39. A14
40. A15
41. A16
42. A17
43. A18
44. A19
45. A20
46. A21
47. A22
48. A23
49. A24
50. A25
51. A26
52. A27
53. A28
54. A29
55. A30
56. A31
57. VREFCA
58. VREFDQ

Functional Features

• High-speed data transfer
• Low power consumption
• Error correction capabilities
• Self-refresh mode for power-saving
• On-die termination (ODT) for signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Compact size for easy integration
• Low power consumption for improved battery life
• Error correction capabilities ensure data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to non-volatile memory options

Working Principles

IS43DR16640B-3DBI-TR operates based on the principles of dynamic random-access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. When a read or write operation is performed, the data is accessed by activating the appropriate memory cells and transferring the information through the data bus.

Detailed Application Field Plans

IS43DR16640B-3DBI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS43DR16640B-3DBI-TR include: - IS43DR16640C-3DBI-TR - IS43DR16640D-3DBI-TR - IS43DR16640E-3DBI-TR - IS43DR16640F-3DBI-TR

These models offer similar functionality and characteristics, providing options for different customer requirements.

In conclusion, IS43DR16640B-3DBI-TR is a high-speed dynamic random-access memory module used in various electronic devices. Its compact size, low power consumption, and fast data access make it an essential component in modern computing systems. While it has advantages such as error correction capabilities, it also