IS43DR86400C-3DBLI-TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous dynamic random-access memory (SDRAM)
• Package: Ball Grid Array (BGA)
• Essence: Storage and retrieval of digital information in electronic systems
• Packaging/Quantity: Typically sold in reels containing multiple units

Specifications

• Type: SDRAM
• Organization: 4Gbit (512M x 8)
• Voltage Supply: 1.7V - 1.95V
• Clock Frequency: Up to 800MHz
• Access Time: 3ns (max)
• Operating Temperature Range: -40°C to +85°C
• Package Dimensions: 13mm x 9mm

Detailed Pin Configuration

The IS43DR86400C-3DBLI-TR features a total of 78 pins arranged as follows:

Pin Number | Pin Name | Description -----------|----------|------------ 1 | VDD | Power supply voltage 2 | VDDQ | Power supply voltage for input/output buffers 3 | DQ0 | Data input/output pin 4 | DQ1 | Data input/output pin ... | ... | ... 76 | DQ74 | Data input/output pin 77 | DQ75 | Data input/output pin 78 | VSS | Ground

Functional Features

• High-speed operation allows for rapid data access and transfer.
• Low-power consumption helps conserve energy in electronic devices.
• Synchronous design enables precise timing control.
• Dynamic random-access memory provides flexibility in storing and retrieving data.

Advantages

• Fast data access and transfer speeds enhance overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Synchronous design ensures reliable and accurate data transmission.
• Large storage capacity accommodates a wide range of applications.

Disadvantages

• SDRAM requires continuous power supply to retain stored data.
• Sensitivity to electrical noise may affect performance in noisy environments.
• Limited durability compared to non-volatile memory technologies.
• Higher cost per unit compared to some other memory options.

Working Principles

The IS43DR86400C-3DBLI-TR operates based on the principles of synchronous dynamic random-access memory. It stores digital information in an array of capacitors, with each capacitor representing a single bit of data. The memory cells are organized into rows and columns, allowing for efficient access and retrieval of data. The synchronous nature of the memory ensures that data transfers occur in synchronization with an external clock signal, enabling precise timing control.

Detailed Application Field Plans

The IS43DR86400C-3DBLI-TR is commonly used in various electronic systems that require high-speed and low-power memory solutions. Some typical application fields include: - Personal computers and laptops - Servers and data centers - Networking equipment - Mobile devices (smartphones, tablets) - Automotive electronics - Industrial automation systems

Detailed and Complete Alternative Models

• IS43DR86400D-3DBLI-TR
• IS43DR86400E-3DBLI-TR
• IS43DR86400F-3DBLI-TR
• IS43DR86400G-3DBLI-TR
• IS43DR86400H-3DBLI-TR

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable memory device for specific applications.

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