Зображення може бути репрезентативним.
Деталі продукту див. у специфікаціях.
IS43R32400E-5BLI-TR

IS43R32400E-5BLI-TR

Product Overview

Category

IS43R32400E-5BLI-TR belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval purposes.

Characteristics

  • Integrated circuit type: Dynamic Random Access Memory (DRAM)
  • Storage capacity: 4 Gigabits (Gb)
  • Organization: 32 Megabytes (MB) x 16 bits
  • Operating voltage: 1.7V - 1.95V
  • Package type: Ball Grid Array (BGA)
  • Package dimensions: 10mm x 13mm
  • Temperature range: -40°C to +85°C

Packaging/Quantity

IS43R32400E-5BLI-TR is typically packaged in reels, with each reel containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory type: Synchronous DRAM (SDRAM)
  • Clock frequency: Up to 400 MHz
  • Data rate: 800 Mbps
  • Interface: Double Data Rate (DDR)
  • Burst length: 8 or 4
  • Refresh mode: Auto-refresh and self-refresh
  • CAS latency: 3, 4, 5, 6, or 7 cycles
  • Power supply current: Varies based on operating conditions

Detailed Pin Configuration

The IS43R32400E-5BLI-TR IC has a total of 60 pins. The pin configuration is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. /RAS
  20. /CAS
  21. /WE
  22. /CS
  23. BA0
  24. BA1
  25. A0
  26. A1
  27. A2
  28. A3
  29. A4
  30. A5
  31. A6
  32. A7
  33. A8
  34. A9
  35. A10
  36. A11
  37. A12
  38. A13
  39. A14
  40. A15
  41. A16
  42. A17
  43. A18
  44. A19
  45. A20
  46. A21
  47. A22
  48. VDD
  49. VSS
  50. CK
  51. CKE
  52. /CS
  53. /CKE
  54. /RESET
  55. /ODT
  56. VREF
  57. VSS
  58. VDD
  59. VSS
  60. VDD

Functional Features

  • High-speed data transfer with a clock frequency of up to 400 MHz.
  • Efficient memory organization allowing for quick access and retrieval of data.
  • Low power consumption in both active and standby modes.
  • Auto-refresh and self-refresh modes for maintaining data integrity during power fluctuations.
  • Double Data Rate (DDR) interface for improved data transfer rates.

Advantages and Disadvantages

Advantages

  • High-speed performance enables faster data processing.
  • Efficient memory organization allows for optimal data storage and retrieval.
  • Low power consumption helps prolong battery life in portable devices.
  • Auto-refresh and self-refresh modes ensure data integrity during power fluctuations.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Sensitive to electrical noise, requiring proper shielding and grounding measures.
  • Higher cost compared to some alternative memory solutions.

Working Principles

IS43R32400E-5BLI-TR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The IC utilizes a synchronous interface and employs clock signals to synchronize data transfers between the memory and the host device.

Detailed Application Field Plans

IS43R32400E-5BLI-TR finds applications in various electronic devices that require high-speed data storage and retrieval capabilities. Some potential application fields include:

  1. Personal computers and laptops
  2. Mobile phones and tablets
  3. Gaming consoles
  4. Networking equipment
  5. Automotive electronics
  6. Industrial control systems
  7. Medical devices

Detailed and Complete Alternative Models

  1. IS43R32800E-5BLI-TR: 8 Gigabit (

Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням IS43R32400E-5BLI-TR у технічних рішеннях

Sure! Here are 10 common questions and answers related to the application of IS43R32400E-5BLI-TR in technical solutions:

  1. Question: What is IS43R32400E-5BLI-TR?
    - Answer: IS43R32400E-5BLI-TR is a specific model of synchronous DRAM (SDRAM) memory chip.

  2. Question: What is the capacity of IS43R32400E-5BLI-TR?
    - Answer: The IS43R32400E-5BLI-TR has a capacity of 4 gigabits (Gb).

  3. Question: What is the operating voltage range for IS43R32400E-5BLI-TR?
    - Answer: The operating voltage range for IS43R32400E-5BLI-TR is typically 1.7V to 1.95V.

  4. Question: What is the clock frequency supported by IS43R32400E-5BLI-TR?
    - Answer: IS43R32400E-5BLI-TR supports clock frequencies up to 400 MHz.

  5. Question: What is the package type of IS43R32400E-5BLI-TR?
    - Answer: IS43R32400E-5BLI-TR comes in a BGA (Ball Grid Array) package.

  6. Question: Can IS43R32400E-5BLI-TR be used in mobile devices?
    - Answer: Yes, IS43R32400E-5BLI-TR is suitable for use in mobile devices like smartphones and tablets.

  7. Question: Is IS43R32400E-5BLI-TR compatible with different microcontrollers?
    - Answer: Yes, IS43R32400E-5BLI-TR is compatible with a wide range of microcontrollers that support SDRAM.

  8. Question: What are the typical applications of IS43R32400E-5BLI-TR?
    - Answer: IS43R32400E-5BLI-TR is commonly used in applications such as mobile devices, networking equipment, and industrial automation systems.

  9. Question: Does IS43R32400E-5BLI-TR support low-power modes?
    - Answer: Yes, IS43R32400E-5BLI-TR supports various low-power modes to optimize energy consumption.

  10. Question: Are there any specific design considerations when using IS43R32400E-5BLI-TR?
    - Answer: It is important to ensure proper signal integrity, power supply stability, and adhere to the recommended operating conditions provided in the datasheet when designing with IS43R32400E-5BLI-TR.

Please note that the answers provided here are general and may vary depending on the specific requirements and technical documentation of IS43R32400E-5BLI-TR.