IS61NLP102418-200B3LI

Product Overview

Category

IS61NLP102418-200B3LI belongs to the category of integrated circuits (ICs).

Use

This product is primarily used in electronic devices for memory storage and retrieval.

Characteristics

• High-speed performance
• Low power consumption
• Compact size
• Reliable operation

Package

IS61NLP102418-200B3LI is available in a small outline package (SOP) format.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage solutions for electronic devices.

Packaging/Quantity

IS61NLP102418-200B3LI is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Non-volatile RAM
• Capacity: 1 Megabit (128K x 8)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: SOP

Detailed Pin Configuration

The pin configuration of IS61NLP102418-200B3LI is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. CE#
11. OE#
12. WE#
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. NC
22. GND

Functional Features

• Non-volatile storage: Retains data even when power is disconnected.
• High-speed access: Allows for quick retrieval and storage of data.
• Low power consumption: Ensures efficient energy usage.
• Easy integration: Compatible with various electronic devices.

Advantages and Disadvantages

Advantages

• Fast access time improves overall device performance.
• Non-volatile memory ensures data integrity during power interruptions.
• Low power consumption extends battery life in portable devices.
• Compact size allows for space-efficient designs.

Disadvantages

• Limited capacity compared to other memory options.
• Higher cost per unit compared to some alternatives.
• Requires parallel interface, which may not be suitable for all applications.

Working Principles

IS61NLP102418-200B3LI utilizes non-volatile RAM technology to store and retrieve data. It operates by applying appropriate voltage levels to the address lines (A0-A7) to select a specific memory location. The control signals (CE#, OE#, WE#) are used to enable reading or writing operations. Data is transferred through the input/output lines (I/O0-I/O7) in parallel format.

Detailed Application Field Plans

IS61NLP102418-200B3LI finds application in various electronic devices, including but not limited to: - Mobile phones - Digital cameras - Portable media players - Gaming consoles - Automotive electronics

Detailed and Complete Alternative Models

1. IS61LV25616AL-10TLI: 256K x 16 Asynchronous CMOS SRAM
2. IS62WV1288BLL-55HLI: 128K x 8 Asynchronous CMOS SRAM
3. IS64WV6416BLL-10TLI: 64K x 16 Asynchronous CMOS SRAM
4. IS66WV51216BLL-70BLI: 512K x 16 Asynchronous CMOS SRAM

These alternative models offer similar functionality and can be considered as substitutes for IS61NLP102418-200B3LI in different applications.

In conclusion, IS61NLP102418-200B3LI is a high-performance non-volatile RAM integrated circuit that provides efficient memory storage solutions for various electronic devices. Its compact size, low power consumption, and reliable operation make it a suitable choice for many applications. However, its limited capacity and higher cost per unit should be taken into consideration when selecting alternatives.