IS62WV6416BLL-55BLI-TR

Product Overview

Category

IS62WV6416BLL-55BLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Large storage capacity
• Compact package size

Package

IS62WV6416BLL-55BLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS62WV6416BLL-55BLI-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 64K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 55 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS62WV6416BLL-55BLI-TR is as follows:

1. VCC
2. A0-A15
3. DQ0-DQ15
4. /WE (Write Enable)
5. /OE (Output Enable)
6. /CE (Chip Enable)
7. /UB (Upper Byte)
8. /LB (Lower Byte)
9. /BYTE (Byte Mode Select)
10. /ZZ (Power Down)

Functional Features

• High-speed random access
• Low power consumption in standby mode
• Easy interfacing with other components
• Byte mode operation for flexible data access
• Power-down mode for reduced power consumption during idle periods

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Compact package size
• Easy integration into various electronic devices
• Flexible byte mode operation

Disadvantages

• Limited storage capacity compared to other memory technologies
• Volatile memory requires constant power supply to retain data

Working Principles

IS62WV6416BLL-55BLI-TR is based on static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that the data is lost when power is removed. The memory cells in SRAM are made up of flip-flops, which can hold data as long as power is supplied. The access time of 55 ns ensures fast read and write operations.

Detailed Application Field Plans

IS62WV6416BLL-55BLI-TR finds applications in various electronic devices and systems, including: - Computers and laptops - Smartphones and tablets - Networking equipment - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models to IS62WV6416BLL-55BLI-TR include: - IS62WV6416BLL-70BLI-TR: Similar specifications but with a faster access time of 70 ns. - IS62WV6416BLL-45BLI-TR: Similar specifications but with a lower access time of 45 ns. - IS62WV6416BLL-25BLI-TR: Similar specifications but with a significantly faster access time of 25 ns.

These alternative models offer different performance characteristics to suit specific application requirements.

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