IS66WV51216DBLL-55TLI-TR

Product Overview

Category

IS66WV51216DBLL-55TLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Large storage capacity
• Reliable data retention

Package

IS66WV51216DBLL-55TLI-TR is available in a small form factor package, suitable for integration into compact electronic devices.

Essence

The essence of IS66WV51216DBLL-55TLI-TR lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Capacity: 512 megabits (64 megabytes)
• Operating Voltage: 3.3V
• Speed Grade: -55°C to +125°C
• Interface: Parallel
• Organization: 16M words x 16 bits
• Access Time: 55 nanoseconds

Detailed Pin Configuration

1. VDD - Power Supply
2. VSS - Ground
3. A0-A23 - Address Inputs
4. DQ0-DQ15 - Data Inputs/Outputs
5. WE - Write Enable
6. OE - Output Enable
7. CE - Chip Enable
8. UB/LB - Upper Byte/Lower Byte Control
9. CLK - Clock Input
10. NC - No Connection

Functional Features

• Fast read and write operations
• Asynchronous and synchronous burst modes
• Automatic power-down and self-refresh modes for power saving
• Easy interfacing with microcontrollers and other digital devices
• Built-in error detection and correction mechanisms

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing
• Non-volatile memory ensures data retention even during power loss
• Low power consumption prolongs battery life in portable devices
• Large storage capacity accommodates extensive data requirements
• Reliable data retention prevents data corruption or loss

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity
• Susceptible to electromagnetic interference (EMI) and radiation

Working Principles

IS66WV51216DBLL-55TLI-TR utilizes SRAM technology, which stores data using flip-flops. It operates by storing binary information in a matrix of memory cells, each consisting of a flip-flop circuit. The stored data can be accessed and modified through address and data lines, controlled by various control signals.

Detailed Application Field Plans

IS66WV51216DBLL-55TLI-TR finds applications in various electronic devices, including: 1. Computers and servers 2. Networking equipment 3. Mobile phones and tablets 4. Automotive electronics 5. Industrial automation systems 6. Medical devices 7. Consumer electronics

Detailed and Complete Alternative Models

1. IS66WV25616DBLL-55TLI-TR - 256 megabit (32 megabyte) capacity variant
2. IS66WV102416DBLL-55TLI-TR - 1 gigabit (128 megabyte) capacity variant
3. IS66WV204816DBLL-55TLI-TR - 2 gigabit (256 megabyte) capacity variant
4. IS66WV409616DBLL-55TLI-TR - 4 gigabit (512 megabyte) capacity variant

These alternative models offer different storage capacities to cater to varying application requirements.

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