IS66WVE2M16EALL-70BLI-TR

Product Overview

Category

IS66WVE2M16EALL-70BLI-TR belongs to the category of memory products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Compact package size
• Reliable performance

Package

IS66WVE2M16EALL-70BLI-TR is available in a small form factor package, designed to fit into various electronic devices seamlessly.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage for electronic devices.

Packaging/Quantity

IS66WVE2M16EALL-70BLI-TR is typically packaged in reels or trays, with a specific quantity per package depending on the manufacturer's specifications.

Specifications

• Model: IS66WVE2M16EALL-70BLI-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 2 Megabits x 16
• Operating Voltage: 3.3V
• Speed Grade: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS66WVE2M16EALL-70BLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /OE
38. /CS1
39. /CS2
40. VSS

Functional Features

• Random access memory for fast data retrieval
• Synchronous operation for efficient data transfer
• Low power consumption for extended battery life
• Easy integration into various electronic devices
• Reliable performance in demanding applications

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data
• Fast data access speed enables quick processing of information
• Low power consumption helps conserve energy
• Compact package size facilitates integration into space-constrained devices
• Reliable performance ensures data integrity and system stability

Disadvantages

• Limited storage capacity compared to higher-capacity memory options
• Higher cost per unit compared to lower-capacity memory alternatives
• Requires proper handling and installation to prevent damage

Working Principles

IS66WVE2M16EALL-70BLI-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, which can be accessed and modified through specific addressing and control signals. The synchronous operation ensures data is transferred at precise timings, enhancing overall system performance.

Detailed Application Field Plans

IS66WVE2M16EALL-70BLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Consumer electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS66WVE2M16EALL-70BLI-TR include: - IS66WVE2M16DALL-70BLI-TR - IS66WVE2M16BLL-70BLI-TR - IS66WVE2M16BALL-70BLI-TR - IS66WVE2M16ECLL-70BLI-TR

These models provide comparable specifications and features, allowing users to choose the most suitable option for their specific requirements.

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