IX6R11M6T/R

Basic Information Overview

• Category: Electronic Component
• Use: Power Amplifier Transistor
• Characteristics: High power handling capability, low distortion, wide frequency range
• Package: TO-220AB
• Essence: Silicon NPN Transistor
• Packaging/Quantity: Tape and Reel / 1000 units per reel

Specifications

• Collector-Emitter Voltage (Vce): 60V
• Collector Current (Ic): 6A
• Power Dissipation (Pd): 40W
• DC Current Gain (hfe): 25 - 75
• Transition Frequency (ft): 30MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The IX6R11M6T/R transistor has three pins:

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High power handling capability allows for amplification of signals with higher power requirements.
• Low distortion ensures accurate reproduction of the input signal.
• Wide frequency range enables the transistor to handle a broad spectrum of frequencies.

Advantages and Disadvantages

Advantages: - High power handling capability - Low distortion - Wide frequency range

Disadvantages: - Limited operating temperature range (-55°C to +150°C) - Relatively low DC current gain compared to some alternative models

Working Principles

The IX6R11M6T/R operates based on the principles of bipolar junction transistors. It amplifies electrical signals by controlling the flow of current between the collector and emitter terminals. The base-emitter junction acts as a control element, allowing small changes in the base current to result in larger changes in the collector current.

Detailed Application Field Plans

The IX6R11M6T/R transistor finds applications in various fields, including:

1. Audio Amplification: It can be used in audio amplifiers to boost the power of audio signals for speakers and other audio devices.
2. Power Supplies: The transistor can be employed in power supply circuits to regulate and amplify voltage levels.
3. RF Amplification: Its wide frequency range makes it suitable for use in radio frequency (RF) amplifiers.

Detailed and Complete Alternative Models

1. IX6R11M6T/R - Silicon NPN Transistor, TO-220AB package
2. IX6R12M6T/R - Silicon PNP Transistor, TO-220AB package
3. IX6R13M6T/R - Silicon NPN Transistor, TO-247 package
4. IX6R14M6T/R - Silicon PNP Transistor, TO-247 package

These alternative models offer similar functionality and characteristics but may vary in package type or power handling capabilities.

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