IXGA12N100

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High voltage, low on-resistance, high speed switching
• Package: TO-220AB
• Essence: Efficient power management
• Packaging/Quantity: 50 pieces per tube

Specifications

• Voltage Rating: 1000V
• Current Rating: 12A
• On-Resistance: 0.35Ω
• Gate Charge: 30nC
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The IXGA12N100 follows the standard pin configuration for a TO-220AB package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low gate charge for fast switching
• Low on-resistance for high efficiency
• Avalanche energy specified
• Enhanced body diode dV/dt and di/dt capability

Advantages and Disadvantages

Advantages

• High voltage rating
• Low on-resistance
• Fast switching speed
• Enhanced body diode capability

Disadvantages

• Relatively higher gate charge compared to some alternatives
• Larger package size compared to SMD alternatives

Working Principles

The IXGA12N100 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The IXGA12N100 is suitable for various power switching applications including: - Power supplies - Motor drives - Inverters - UPS systems - Solar inverters

Detailed and Complete Alternative Models

• IRFB4110PbF
• STW12NK100Z

In conclusion, the IXGA12N100 Power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications. While it has advantages such as enhanced body diode capability, it also has limitations in terms of gate charge and package size. Understanding its specifications, functional features, and application field plans can help in effectively integrating this component into various power management systems.

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