MX29GL640ELT2I-70G

Product Overview

Category

The MX29GL640ELT2I-70G belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The MX29GL640ELT2I-70G offers a storage capacity of 64 megabits (8 megabytes), allowing for ample space to store data.
• Fast data transfer rate: With a maximum operating frequency of 70 MHz, this flash memory device enables quick read and write operations.
• Low power consumption: The MX29GL640ELT2I-70G is designed to consume minimal power, making it suitable for battery-powered devices.
• Durable and reliable: This flash memory device is built to withstand harsh environmental conditions and offers high resistance to shock and vibration.
• Compact package: The MX29GL640ELT2I-70G is available in a small form factor package, ensuring easy integration into various electronic devices.

Packaging/Quantity

The MX29GL640ELT2I-70G is typically packaged in tape and reel format, which facilitates automated assembly processes. It is commonly available in quantities of 2500 units per reel.

Specifications

• Memory Type: Flash
• Capacity: 64 Megabits (8 Megabytes)
• Operating Voltage: 2.7V - 3.6V
• Operating Frequency: Up to 70 MHz
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MX29GL640ELT2I-70G features a parallel interface with a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. WE#
31. RE#
32. CE#
33. BYTE#
34. WP#
35. RY/BY#
36. DQ0
37. DQ1
38. DQ2
39. DQ3
40. DQ4
41. DQ5
42. DQ6
43. DQ7
44. VSS
45. VSS
46. NC
47. NC
48. VCC

Functional Features

• Erase and Program Operations: The MX29GL640ELT2I-70G supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: This flash memory device offers the ability to lock specific blocks of memory, preventing accidental modification or erasure.
• Read and Write Protection: The MX29GL640ELT2I-70G includes features to protect data from unauthorized access, ensuring data security.
• Automatic Sleep Mode: When not in use, this flash memory device enters a low-power sleep mode, conserving energy.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Durable and reliable
• Compact package size

Disadvantages

• Limited compatibility with certain older devices that do not support parallel flash memory interfaces.

Working Principles

The MX29GL640ELT2I-70G utilizes the principles of NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. The data is stored by trapping electric charges within these cells, which can be later read or modified through specific electrical operations.

Detailed Application Field Plans

The MX29GL640ELT2I-70G finds applications in various electronic devices that require non-volatile storage capabilities. Some potential application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MX29GL128ELT2I-70G: This flash memory device offers double the storage capacity of the MX29GL640ELT2I-70G, providing 128 megabits (16 megabytes) of storage space