M28W640HCT70N6E

Basic Information Overview

• Category: Memory chip
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High capacity (64 megabits)
  • Low power consumption
  • Fast read and write operations
• Package: Integrated circuit (IC)
• Essence: Stores digital information in a compact and durable form
• Packaging/Quantity: Typically sold in reels or trays containing multiple chips

Specifications

• Capacity: 64 megabits (8 megabytes)
• Organization: 8-bit wide data bus
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Serial Peripheral Interface (SPI)
• Erase/Program Time:
  • Sector erase time: 100ms (typical)
  • Byte program time: 10µs (typical)
• Data Retention: 20 years (minimum)

Detailed Pin Configuration

The M28W640HCT70N6E chip has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | /CS | Chip select input | | 4 | SCK | Serial clock input | | 5 | SI | Serial data input | | 6 | SO | Serial data output | | 7 | WP#/ACC | Write protect input or Acceleration input | | 8 | HOLD#/ACC | Hold input or Acceleration input |

Functional Features

• Non-volatile memory: Retains stored data even when power is removed
• High capacity: Provides ample storage space for various applications
• Low power consumption: Helps conserve energy in portable devices
• Fast read and write operations: Enables quick access to stored data

Advantages and Disadvantages

Advantages: - Large storage capacity - Low power consumption - Fast data access - Durable and reliable

Disadvantages: - Relatively high cost compared to other memory options - Limited write endurance (number of erase/write cycles)

Working Principles

The M28W640HCT70N6E utilizes flash memory technology to store digital information. It consists of a grid of memory cells, each capable of storing a binary value (0 or 1). These cells are organized into sectors, which can be individually erased or programmed.

To write data, the chip applies a high voltage to the selected memory cells, causing them to trap an electric charge. This charge represents the desired data value. Reading data involves detecting the presence or absence of charge in the memory cells.

Detailed Application Field Plans

The M28W640HCT70N6E memory chip finds application in various electronic devices, including: - Mobile phones - Tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the M28W640HCT70N6E memory chip include: - M25P64: Similar specifications, but with different pin configuration - AT45DB641E: Comparable capacity and interface, but different package type - S29GL064N: Similar characteristics and pin configuration, but with higher voltage range

Note: The above alternatives are provided as examples and may not cover all available options.

This entry provides an overview of the M28W640HCT70N6E memory chip, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.