M29W160EB90N1

Product Overview

Category

M29W160EB90N1 belongs to the category of Flash Memory.

Use

It is primarily used for data storage in electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: M29W160EB90N1 has a storage capacity of 16 megabits (2 megabytes).
• Fast read and write speeds: Allows for quick access to stored data.
• Reliable performance: Offers high endurance and data retention capabilities.
• Low power consumption: Optimized for energy efficiency.

Package

M29W160EB90N1 is available in a compact and standardized package suitable for surface mounting on printed circuit boards (PCBs).

Essence

The essence of M29W160EB90N1 lies in its ability to provide reliable and high-capacity storage for various electronic devices.

Packaging/Quantity

Typically, M29W160EB90N1 is packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NOR Flash
• Memory Size: 16 Megabits (2 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP48

Detailed Pin Configuration

The pin configuration of M29W160EB90N1 is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | A0 | Address Input | | 2 | A1 | Address Input | | 3 | A2 | Address Input | | 4 | A3 | Address Input | | 5 | A4 | Address Input | | 6 | A5 | Address Input | | 7 | A6 | Address Input | | 8 | A7 | Address Input | | 9 | A8 | Address Input | | 10 | A9 | Address Input | | 11 | A10 | Address Input | | 12 | A11 | Address Input | | 13 | A12 | Address Input | | 14 | A13 | Address Input | | 15 | A14 | Address Input | | 16 | A15 | Address Input | | 17 | A16 | Address Input | | 18 | A17 | Address Input | | 19 | A18 | Address Input | | 20 | A19 | Address Input | | 21 | A20 | Address Input | | 22 | A21 | Address Input | | 23 | A22 | Address Input | | 24 | A23 | Address Input | | 25 | A24 | Address Input | | 26 | A25 | Address Input | | 27 | ALE | Address Latch Enable | | 28 | CE# | Chip Enable | | 29 | CLE | Command Latch Enable | | 30 | WE# | Write Enable | | 31 | RE# | Read Enable | | 32 | WP# | Write Protect | | 33 | BYTE# | Byte/Word Selection | | 34-41 | DQ0-DQ7 | Data Input/Output | | 42-45 | VSS | Ground | | 46 | VCC | Power Supply | | 47 | RP# | Ready/Busy Output | | 48 | RESET# | Reset |

Functional Features

• Erase and Program Operations: M29W160EB90N1 supports both sector erase and byte/word program operations.
• Block Locking: Allows specific blocks of memory to be locked to prevent accidental erasure or modification.
• Status Register: Provides information about the device's status, such as erase or program completion.
• Automatic Sleep Mode: Enters a low-power sleep mode when not in use, reducing power consumption.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast read and write speeds enable quick access to stored data.
• Reliable performance ensures data integrity and longevity.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into PCB designs.

Disadvantages

• Limited endurance: Flash memory has a finite