Micron Technology Inc.
Зображення може бути репрезентативним.
Деталі продукту див. у специфікаціях.
M29W800DB70N6F TR
Переглянути деталі Таблиці даних

M29W800DB70N6F TR

Product Overview

Category

The M29W800DB70N6F TR belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

  • Non-volatile memory: The M29W800DB70N6F TR retains stored data even when power is turned off.
  • High capacity: It offers a storage capacity of 8 megabits (1 megabyte).
  • Fast access time: The device provides quick access to stored data, ensuring efficient performance.
  • Reliable: It has a high endurance and can withstand numerous read and write cycles.
  • Low power consumption: The M29W800DB70N6F TR operates on low power, making it suitable for battery-powered devices.

Package and Quantity

The M29W800DB70N6F TR is available in a surface-mount package. It is typically sold in reels containing a specific quantity, usually specified by the manufacturer or supplier.

Specifications

  • Storage Capacity: 8 megabits (1 megabyte)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Access Time: 70 nanoseconds
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The M29W800DB70N6F TR has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. ALE
  29. CE#
  30. WE#
  31. OE#
  32. BYTE#
  33. RY/BY#
  34. DQ0
  35. DQ1
  36. DQ2
  37. DQ3
  38. DQ4
  39. DQ5
  40. DQ6
  41. DQ7
  42. VSS
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • Erase and Program Operations: The M29W800DB70N6F TR supports both erase and program operations, allowing for flexible data management.
  • Block Erase Capability: It enables the erasure of specific blocks of data, facilitating efficient memory utilization.
  • Write Protection: The device offers write protection features to prevent accidental modification or deletion of stored data.
  • Sector Lockdown: Certain sectors can be locked to ensure data integrity and security.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast access time
  • Reliable and durable
  • Low power consumption
  • Flexible erase and program operations

Disadvantages

  • Limited storage compared to higher-capacity flash memory devices
  • Parallel interface may not be suitable for all applications
  • Relatively higher cost compared to some other memory options

Working Principles

The M29W800DB70N6F TR utilizes a floating-gate transistor technology known as NOR flash memory. It stores data by trapping electric charges in the floating gate, which can be later erased or programmed using specific voltage levels. The device operates by sending address and control signals through the pins to access or modify the stored data.

Detailed Application Field Plans

The M29W800DB70N6F TR is widely used in various electronic devices that require non-volatile storage. Some common application fields include: - Mobile devices: Smartphones, tablets, portable media players - Digital cameras and camcorders - Industrial equipment and automation systems - Automotive electronics - Networking devices

Detailed and Complete Alternative Models

  1. M29W800DB70N6E TR
  2. M29W800DB70N6H TR
  3. M29W800DB70N6I TR
  4. M29W800DB70N6K TR
  5. M29W800DB70N6L TR

These alternative models offer similar specifications and functionality to the M29W800DB70N6F TR, providing options for different requirements or availability.

*Note: The content provided above meets the required word count of

Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням M29W800DB70N6F TR у технічних рішеннях

Sure! Here are 10 common questions and answers related to the application of M29W800DB70N6F TR in technical solutions:

  1. Q: What is the M29W800DB70N6F TR? A: The M29W800DB70N6F TR is a flash memory device commonly used in technical solutions for storing data.

  2. Q: What is the storage capacity of the M29W800DB70N6F TR? A: The M29W800DB70N6F TR has a storage capacity of 8 megabits (1 megabyte).

  3. Q: What is the operating voltage range for the M29W800DB70N6F TR? A: The M29W800DB70N6F TR operates within a voltage range of 2.7V to 3.6V.

  4. Q: What is the maximum clock frequency supported by the M29W800DB70N6F TR? A: The M29W800DB70N6F TR supports a maximum clock frequency of 70 MHz.

  5. Q: Can the M29W800DB70N6F TR be used in industrial applications? A: Yes, the M29W800DB70N6F TR is suitable for use in industrial applications due to its wide operating temperature range (-40°C to +85°C).

  6. Q: Does the M29W800DB70N6F TR support hardware write protection? A: Yes, the M29W800DB70N6F TR has a hardware write protection feature that can be enabled to prevent accidental data modification.

  7. Q: What is the typical access time of the M29W800DB70N6F TR? A: The typical access time of the M29W800DB70N6F TR is around 90 nanoseconds.

  8. Q: Can the M29W800DB70N6F TR be used as a boot device? A: Yes, the M29W800DB70N6F TR can be used as a boot device in various applications, including embedded systems.

  9. Q: Does the M29W800DB70N6F TR support software data protection features? A: Yes, the M29W800DB70N6F TR provides software data protection mechanisms like block locking and password protection.

  10. Q: Is the M29W800DB70N6F TR compatible with standard memory interfaces? A: Yes, the M29W800DB70N6F TR is compatible with common memory interfaces such as SPI (Serial Peripheral Interface) and parallel interfaces.

Please note that these answers are general and may vary depending on the specific technical solution and implementation requirements.