M50FLW080BNB5TG TR

Product Overview

Category

M50FLW080BNB5TG TR belongs to the category of flash memory devices.

Use

It is primarily used for data storage and retrieval in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The data stored in M50FLW080BNB5TG TR is retained even when power is turned off.
• High capacity: It offers a storage capacity of 8 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, it enables quick read and write operations.
• Compact form factor: The device is designed to be small and lightweight, making it suitable for integration into compact electronic devices.
• Reliable performance: M50FLW080BNB5TG TR ensures data integrity and durability through advanced error correction techniques.

Package and Quantity

M50FLW080BNB5TG TR is typically packaged in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs). It is commonly available in reels containing multiple units, with each reel containing a specific quantity of devices.

Specifications

• Storage Capacity: 8 GB
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Data Transfer Rate: Up to 104 MHz
• Operating Temperature Range: -40°C to +85°C
• Package Type: 24-ball BGA

Detailed Pin Configuration

The pin configuration of M50FLW080BNB5TG TR is as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply Voltage | | 2 | GND | Ground | | 3 | HOLD# | Hold Input | | 4 | WP# | Write Protect Input | | 5 | SCK | Serial Clock Input | | 6 | SI | Serial Data Input | | 7 | SO | Serial Data Output | | 8 | CS# | Chip Select Input |

Functional Features

• High-speed data transfer: M50FLW080BNB5TG TR supports fast read and write operations, enabling efficient data access.
• Flexible erase options: It offers various erase modes, including sector erase, block erase, and chip erase, providing flexibility in managing stored data.
• Security features: The device incorporates security measures such as hardware protection of memory contents and software protection against unauthorized access.
• Low power consumption: M50FLW080BNB5TG TR is designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Compact form factor
• Reliable performance

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory.

Working Principles

M50FLW080BNB5TG TR utilizes the principles of NAND flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information, with the presence or absence of charge indicating the value of each bit.

During read operations, the stored charges are measured to determine the data. For write operations, the charges are either added or removed from the floating gate transistors using electrical pulses.

Detailed Application Field Plans

M50FLW080BNB5TG TR finds applications in various electronic devices that require non-volatile data storage. Some of the common application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• M50FLW080BNB5TG: This is the standard version without the TR suffix, which indicates tape and reel packaging.
• M50FLW080BNB5T: Similar to M50FLW080BNB5TG, but packaged in tubes instead of reels.

These alternative models offer the same specifications and functionality as M50FLW080BNB5TG TR, with the only difference being the packaging format.

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