M58WR032KB70ZB6Z

Product Overview

Category

M58WR032KB70ZB6Z belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: Retains stored data even when power is turned off.
• High capacity: Offers a storage capacity of 32 megabits (4 megabytes).
• Fast access time: Provides quick read and write operations.
• Low power consumption: Optimized for energy efficiency.
• Wide operating temperature range: Suitable for use in diverse environments.

Package

The M58WR032KB70ZB6Z is available in a compact and durable package, ensuring easy integration into electronic circuits. It adheres to industry-standard packaging guidelines.

Essence

The essence of M58WR032KB70ZB6Z lies in its ability to reliably store and retrieve digital information, enabling efficient data management in electronic devices.

Packaging/Quantity

This product is typically sold in reels or trays, with each reel containing a specific quantity of M58WR032KB70ZB6Z units. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 4M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP
• Pin Count: 48

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. VSS
47. NC
48. VCC

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Built-in error correction codes (ECC) for enhanced reliability
• Low power consumption in standby mode
• Automatic sleep mode for further power savings
• Hardware and software protection mechanisms to prevent unauthorized access

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Wide operating temperature range
• Low power consumption
• Reliable data retention
• Easy integration into electronic circuits

Disadvantages

• Limited endurance (limited number of erase/write cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

M58WR032KB70ZB6Z utilizes flash memory technology, which is based on the principle of trapping electric charges within floating gate transistors. These trapped charges represent binary data (0 or 1). The memory cells can be electrically programmed (writing data) and erased (erasing data) using specific voltage levels. When reading data, the stored charges are detected and interpreted as digital information.

Detailed Application Field Plans

M58WR032KB70ZB6Z finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Smartphones and tablets - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

1. M58WR032FT70ZB6Z
2. M58WR032FB70ZB6Z
3. M58WR032FS70ZB6Z
4. M58WR032FR70ZB6Z
5. M58WR032FF70ZB6Z

These alternative models offer similar specifications and functionality to M58WR032KB70ZB6Z, providing flexibility for different design requirements.

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