Micron Technology Inc.
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MT28F008B3VG-9 B
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MT28F008B3VG-9 B

Product Overview

Category

MT28F008B3VG-9 B belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Compact size
  • Low power consumption

Package

MT28F008B3VG-9 B is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

MT28F008B3VG-9 B is typically packaged in trays or reels, with each package containing a specific quantity of flash memory chips.

Specifications

  • Storage Capacity: 8 gigabits (1 gigabyte)
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Access Time: 90 ns
  • Erase/Program Suspend/Erase Suspend: Yes
  • Organization: 512K words x 16 bits

Detailed Pin Configuration

The pin configuration of MT28F008B3VG-9 B is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. ALE
  29. CLE
  30. WE#
  31. RE#
  32. WP#
  33. BYTE#
  34. RY/BY#
  35. VSS
  36. DQ0
  37. DQ1
  38. DQ2
  39. DQ3
  40. DQ4
  41. DQ5
  42. DQ6
  43. DQ7

Functional Features

  • High-speed data transfer
  • Reliable data retention
  • Built-in error correction mechanisms
  • Support for various memory management techniques
  • Compatibility with industry-standard interfaces

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast read and write speeds
  • Compact size
  • Low power consumption
  • Wide operating temperature range

Disadvantages

  • Limited endurance (limited number of erase/write cycles)
  • Relatively higher cost compared to other types of memory

Working Principles

MT28F008B3VG-9 B utilizes a combination of floating-gate transistors and semiconductor technology to store and retrieve digital data. It employs a series of electrical signals and voltage levels to perform read, write, and erase operations.

Detailed Application Field Plans

MT28F008B3VG-9 B finds applications in various electronic devices, including but not limited to: - Smartphones - Tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems

Detailed and Complete Alternative Models

Some alternative models to MT28F008B3VG-9 B include: - MT28F008B5VG-9 B - MT28F008B1VG-9 B - MT28F008B4VG-9 B - MT28F008B2VG-9 B

These alternative models offer similar functionality and characteristics, but may differ in terms of storage capacity, interface, or other specifications.

In conclusion, MT28F008B3VG-9 B is a flash memory product that provides high-speed data storage and retrieval capabilities for various electronic devices. Its compact size, low power consumption, and wide operating temperature range make it suitable for a wide range of applications. However, it has limitations in terms of endurance and cost compared to other memory types.

Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням MT28F008B3VG-9 B у технічних рішеннях

Sure! Here are 10 common questions and answers related to the application of MT28F008B3VG-9 B in technical solutions:

  1. Q: What is MT28F008B3VG-9 B? A: MT28F008B3VG-9 B is a specific model of flash memory chip manufactured by Micron Technology.

  2. Q: What is the capacity of MT28F008B3VG-9 B? A: MT28F008B3VG-9 B has a capacity of 8 megabits (1 megabyte) of data storage.

  3. Q: What is the operating voltage range for MT28F008B3VG-9 B? A: The operating voltage range for MT28F008B3VG-9 B is typically between 2.7V and 3.6V.

  4. Q: What is the access time of MT28F008B3VG-9 B? A: The access time of MT28F008B3VG-9 B is 90 nanoseconds (ns).

  5. Q: Can MT28F008B3VG-9 B be used in automotive applications? A: Yes, MT28F008B3VG-9 B is designed to meet the requirements of automotive applications.

  6. Q: Does MT28F008B3VG-9 B support multiple programming modes? A: Yes, MT28F008B3VG-9 B supports both byte programming and word programming modes.

  7. Q: What is the endurance rating of MT28F008B3VG-9 B? A: MT28F008B3VG-9 B has an endurance rating of 100,000 program/erase cycles per block.

  8. Q: Can MT28F008B3VG-9 B operate in a wide temperature range? A: Yes, MT28F008B3VG-9 B is designed to operate in a temperature range of -40°C to +85°C.

  9. Q: Does MT28F008B3VG-9 B support hardware data protection features? A: Yes, MT28F008B3VG-9 B supports various hardware data protection features like block locking and password protection.

  10. Q: What are some typical applications for MT28F008B3VG-9 B? A: MT28F008B3VG-9 B is commonly used in applications such as automotive systems, industrial control, and consumer electronics where non-volatile storage is required.

Please note that the answers provided here are general and may vary depending on the specific requirements and use cases of the technical solution.