MT28F008B5VG-8 T TR

Product Overview

Category

MT28F008B5VG-8 T TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Compact size
• Low power consumption
• Durable and reliable

Package

MT28F008B5VG-8 T TR comes in a small form factor package that is compatible with surface mount technology (SMT). It is designed to be easily integrated into electronic circuit boards.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

MT28F008B5VG-8 T TR is typically packaged in reels or trays, depending on the quantity ordered. The packaging ensures safe transportation and handling during manufacturing and assembly processes.

Specifications

• Memory Capacity: 8 Megabits (1 Megabyte)
• Organization: 512K words x 16 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The pin configuration of MT28F008B5VG-8 T TR is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RY/BY# - Ready/Busy status
8. WP# - Write protect
9. RESET# - Reset signal
10. VSS - Ground

Functional Features

• High-speed data transfer
• Block erase and program operations
• Automatic sleep mode for power saving
• Error correction code (ECC) for data integrity
• Built-in self-test functionality
• Hardware and software write protection options

Advantages and Disadvantages

Advantages

• Fast read and write speeds enhance overall device performance.
• Non-volatile memory ensures data retention even when power is lost.
• Compact size allows for integration into small electronic devices.
• Low power consumption prolongs battery life.
• Durable and reliable, with a long lifespan.

Disadvantages

• Limited storage capacity compared to other flash memory options.
• Higher cost per unit compared to traditional hard disk drives.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

MT28F008B5VG-8 T TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The data can be read, written, and erased electronically, making it a versatile and efficient storage solution.

Detailed Application Field Plans

MT28F008B5VG-8 T TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Alternative Models

There are several alternative models available in the market that offer similar functionality to MT28F008B5VG-8 T TR. Some notable alternatives include: - Samsung K9F5608U0D - Toshiba TC58NVG0S3E - Micron MT29F8G08ABACAH4

These alternative models vary in terms of capacity, speed, and interface options, allowing customers to choose the most suitable option for their specific requirements.

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