MT28F128J3RP-12 MET TR

Product Overview

Category

MT28F128J3RP-12 MET TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: The MT28F128J3RP-12 MET TR offers a storage capacity of 128 megabits (16 megabytes).
• Fast access time: It provides quick read and write operations, ensuring efficient data transfer.
• Reliable: This memory device has a high endurance and can withstand numerous read and write cycles.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The MT28F128J3RP-12 MET TR is available in a compact and industry-standard package, which ensures compatibility with various electronic systems.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The MT28F128J3RP-12 MET TR is typically packaged in trays or reels, depending on the quantity ordered. The exact packaging quantity may vary based on customer requirements.

Specifications

• Manufacturer: [Manufacturer Name]
• Part Number: MT28F128J3RP-12 MET TR
• Memory Type: Flash memory
• Capacity: 128 megabits (16 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 120 nanoseconds
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#: Ready/Busy status
9. RY/BY#: Read/Busy status
10. WP#: Write protect control

Functional Features

• High-speed data transfer: The MT28F128J3RP-12 MET TR offers fast read and write operations, enabling efficient data transfer.
• Error correction: This memory device incorporates error correction techniques to ensure data integrity.
• Block erase: It supports block erase functionality, allowing for efficient erasure of large data blocks.
• Write protection: The WP# pin can be used to protect the stored data from accidental modification.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable and durable
• Supports error correction

Disadvantages

• Limited endurance (finite number of read/write cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

The MT28F128J3RP-12 MET TR is based on flash memory technology. It utilizes floating-gate transistors to store digital information. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be read back later to retrieve the stored information. The memory cells are organized into blocks, which can be individually erased or written.

Detailed Application Field Plans

The MT28F128J3RP-12 MET TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Smartphones and tablets - Digital cameras - Automotive electronics - Industrial control systems - Embedded systems

Detailed and Complete Alternative Models

• [Alternative Model 1]: [Brief description]
• [Alternative Model 2]: [Brief description]
• [Alternative Model 3]: [Brief description]
• [Alternative Model 4]: [Brief description]

Please note that the above alternative models are just examples and there may be other suitable alternatives available in the market.

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