MT28F400B5SG-8 B

Product Overview

Category

The MT28F400B5SG-8 B belongs to the category of Flash Memory.

Use

It is primarily used for data storage in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High-speed read and write operations: Enables quick access to stored data.
• Compact size: Allows for integration into small electronic devices.
• Durable: Withstands frequent read/write cycles without degradation.

Package

The MT28F400B5SG-8 B is available in a surface-mount package.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The MT28F400B5SG-8 B is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 80 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT28F400B5SG-8 B has the following pin configuration:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. WE# - Write enable control
5. CE# - Chip enable control
6. OE# - Output enable control
7. RP# - Ready/Busy status
8. BYTE# - Byte enable control
9. RESET# - Reset control
10. VSS - Ground

Functional Features

• High-speed data transfer: Enables fast read and write operations.
• Block erase capability: Allows for efficient erasure of large memory blocks.
• Error correction code (ECC): Enhances data integrity and reliability.
• Low power consumption: Optimizes energy efficiency in portable devices.

Advantages and Disadvantages

Advantages

• Fast access times improve overall system performance.
• Non-volatile nature ensures data retention even during power loss.
• Compact size facilitates integration into various electronic devices.
• Block erase capability enables efficient memory management.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to alternative memory options.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

The MT28F400B5SG-8 B utilizes a floating gate transistor technology known as NOR flash memory. It stores data by trapping electric charges within the floating gate, which alters the transistor's conductive properties. This trapped charge represents binary information (0s and 1s) and can be read or modified through appropriate control signals.

Detailed Application Field Plans

The MT28F400B5SG-8 B finds applications in various electronic devices, including but not limited to: - Personal computers - Mobile phones - Digital cameras - Solid-state drives (SSDs) - Set-top boxes

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the MT28F400B5SG-8 B include: - Samsung K9F5608U0D - Micron MT29F4G08ABADAWP - Toshiba TC58NVG2S3ETA00

These alternatives provide comparable specifications and are widely used in the industry.

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