MT28F400B5SG-8 T TR

Product Overview

Category

MT28F400B5SG-8 T TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Compact size: Enables integration into small electronic devices.
• Durable: Withstands harsh environmental conditions.
• Low power consumption: Optimizes battery life in portable devices.

Package

MT28F400B5SG-8 T TR is available in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of this product lies in its ability to provide reliable and high-capacity storage solutions for electronic devices, ensuring efficient data management and retrieval.

Packaging/Quantity

MT28F400B5SG-8 T TR is typically packaged in reels or trays, with each reel containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 Gb (Gigabits)
• Organization: 512 M x 8 bits
• Voltage Supply: 2.7V - 3.6V
• Interface: Parallel
• Access Time: 70 ns (nanoseconds)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT28F400B5SG-8 T TR is as follows:

1. VCC: Power supply voltage
2. A0-A19: Address inputs
3. DQ0-DQ7: Data input/output
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RE#: Read enable
8. WP#: Write protect
9. RY/BY#: Ready/busy

Functional Features

• Block Erase: Allows for erasing large blocks of data simultaneously, enhancing efficiency.
• Page Program: Enables programming of data in small page increments, facilitating flexible data management.
• Read and Write Operations: Supports high-speed read and write operations for quick data access and storage.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: Implements wear-leveling techniques to distribute data evenly across memory cells, prolonging the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• Durable and reliable
• Suitable for a wide range of electronic devices

Disadvantages

• Limited endurance: Flash memory has a finite number of program/erase cycles before it becomes unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

MT28F400B5SG-8 T TR utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. During writing, the charge is adjusted to represent the desired data. Erasing involves removing all charges from a block of cells, preparing them for new data storage.

Detailed Application Field Plans

MT28F400B5SG-8 T TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. MT28F400B5WG-8 T TR: Similar to MT28F400B5SG-8 T TR, but with wider operating temperature range (-40°C to +105°C).
2. MT28F400B3WG-8 T TR: Lower capacity variant (2 Gb) of the same flash memory series.
3. MT28F400B1WG-8 T TR: Lower capacity variant (1 Gb) of the same flash memory series.

These alternative models offer different capacities and temperature ranges to cater to specific application requirements.

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