MT28F800B3WP-9 T TR

Product Overview

Category

MT28F800B3WP-9 T TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High-speed read and write operations: Enables quick access to data.
• Compact size: Allows for integration into small electronic devices.
• Durable: Can withstand harsh environmental conditions.
• Low power consumption: Helps conserve battery life in portable devices.

Package

MT28F800B3WP-9 T TR is available in a surface mount package, which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of this product lies in its ability to provide reliable and high-performance data storage solutions for a wide range of electronic devices.

Packaging/Quantity

MT28F800B3WP-9 T TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 8 megabits (1 megabyte)
• Organization: 1M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The pin configuration of MT28F800B3WP-9 T TR is as follows:

1. VCC: Power supply voltage
2. A0-A19: Address inputs
3. CE: Chip enable
4. OE: Output enable
5. WE: Write enable
6. I/O0-I/O7: Data input/output lines
7. RY/BY: Ready/Busy output
8. WP: Write protect
9. GND: Ground

Functional Features

• Block Erase: Allows for erasing large blocks of data simultaneously, enhancing efficiency.
• Page Program: Enables programming of individual memory pages, providing flexibility in data storage.
• Read and Write Protection: Offers security by allowing the protection of specific memory regions from unauthorized access or modification.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors during read and write operations, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High-speed data access
• Compact size
• Durable and reliable
• Low power consumption
• Flexible data storage options

Disadvantages

• Limited storage capacity compared to other types of memory
• Relatively higher cost per unit compared to traditional hard drives

Working Principles

MT28F800B3WP-9 T TR utilizes a floating gate transistor technology called NAND flash memory. It stores data by trapping electric charges in the floating gate, which can be later detected as binary values during read operations. The data can be written by applying appropriate voltage levels to the control gates of the memory cells.

Detailed Application Field Plans

MT28F800B3WP-9 T TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to MT28F800B3WP-9 T TR include: - MT28F800B5WG-9 T TR - MT28F800B3WG-9 T TR - MT28F800B5WP-9 T TR - MT28F800B3WG-9 B TR

These models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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