Micron Technology Inc.
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MT29F2G08AADWP-ET:D TR
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MT29F2G08AADWP-ET:D TR

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, non-volatile, flash memory
Package: Wafer-level chip scale package (WLCSP)
Essence: NAND Flash memory
Packaging/Quantity: Individual units packaged in reels or trays

Specifications

  • Model: MT29F2G08AADWP-ET:D TR
  • Memory Type: NAND Flash
  • Capacity: 2GB (Gigabytes)
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F2G08AADWP-ET:D TR has a total of 48 pins arranged as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. ALE
  28. CLE
  29. RE#
  30. WE#
  31. WP#
  32. R/B#
  33. CE#
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. GND
  41. DQ0
  42. DQ1
  43. DQ2
  44. DQ3
  45. DQ4
  46. DQ5
  47. DQ6
  48. DQ7

Functional Features

  • High-speed data transfer
  • Error correction and detection mechanisms
  • Block erase and program operations
  • Wear-leveling algorithms for extended lifespan
  • Power-saving features
  • Support for various command sets

Advantages and Disadvantages

Advantages: - Large storage capacity - Non-volatile memory retains data even without power - Fast read and write speeds - Compact package size - Wide operating temperature range

Disadvantages: - Limited endurance compared to other memory technologies - Higher cost per unit compared to some alternatives - Requires specialized controllers for optimal performance

Working Principles

The MT29F2G08AADWP-ET:D TR is based on NAND Flash memory technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information, allowing for high-density storage. The device uses electrical charges to represent data, which can be programmed or erased using specific voltage levels. When reading data, the stored charges are detected and converted back into digital information.

Detailed Application Field Plans

The MT29F2G08AADWP-ET:D TR is commonly used in various applications, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the MT29F2G08AADWP-ET:D TR include: - Samsung K9K8G08U0D - Micron MT29F2G08ABAEAWP - Toshiba TH58NVG6D2FLA89

These models offer similar capacities and functionalities, providing options for different design requirements.

Word count: 345 words

Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням MT29F2G08AADWP-ET:D TR у технічних рішеннях

  1. Question: What is the MT29F2G08AADWP-ET:D TR?
    Answer: The MT29F2G08AADWP-ET:D TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. Question: What is the storage capacity of the MT29F2G08AADWP-ET:D TR?
    Answer: The MT29F2G08AADWP-ET:D TR has a storage capacity of 2 gigabytes (GB).

  3. Question: What is the interface used to connect the MT29F2G08AADWP-ET:D TR to a system?
    Answer: The MT29F2G08AADWP-ET:D TR uses a standard NAND flash interface for communication with the system.

  4. Question: Can the MT29F2G08AADWP-ET:D TR be used in embedded systems?
    Answer: Yes, the MT29F2G08AADWP-ET:D TR is commonly used in various embedded systems such as smartphones, tablets, and industrial applications.

  5. Question: What is the operating voltage range of the MT29F2G08AADWP-ET:D TR?
    Answer: The MT29F2G08AADWP-ET:D TR operates within a voltage range of 2.7V to 3.6V.

  6. Question: Does the MT29F2G08AADWP-ET:D TR support wear-leveling algorithms?
    Answer: Yes, the MT29F2G08AADWP-ET:D TR supports wear-leveling algorithms to ensure even distribution of data writes across the memory cells, prolonging the lifespan of the chip.

  7. Question: Is the MT29F2G08AADWP-ET:D TR compatible with different file systems?
    Answer: Yes, the MT29F2G08AADWP-ET:D TR is compatible with various file systems such as FAT32 and exFAT.

  8. Question: What is the maximum data transfer rate of the MT29F2G08AADWP-ET:D TR?
    Answer: The MT29F2G08AADWP-ET:D TR has a maximum data transfer rate of up to 52 megabytes per second (MB/s).

  9. Question: Can the MT29F2G08AADWP-ET:D TR operate in extreme temperature conditions?
    Answer: Yes, the MT29F2G08AADWP-ET:D TR is designed to operate within a wide temperature range, typically from -40°C to 85°C.

  10. Question: Are there any specific reliability features in the MT29F2G08AADWP-ET:D TR?
    Answer: Yes, the MT29F2G08AADWP-ET:D TR incorporates various reliability features such as error correction codes (ECC) and bad block management to ensure data integrity and enhance overall system reliability.