MT46V32M16BN-5B:F TR

Product Overview

Category

The MT46V32M16BN-5B:F TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage: The MT46V32M16BN-5B:F TR offers a large storage capacity of 32 megabits (4 megabytes).
• Fast data access: With a speed rating of 5B, this chip provides quick access to stored data.
• Low power consumption: The MT46V32M16BN-5B:F TR is designed to operate efficiently with low power requirements.
• Reliable performance: This DRAM chip is known for its stable and reliable performance.

Package

The MT46V32M16BN-5B:F TR is available in a compact and standardized BGA (Ball Grid Array) package. This package ensures easy integration into various electronic devices.

Essence

The essence of the MT46V32M16BN-5B:F TR lies in its ability to provide high-speed and reliable data storage, making it an essential component in modern electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, containing a specific quantity of chips per package. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 32 Megabits x 16 bits
• Speed Rating: 5B
• Operating Voltage: 3.3V
• Package Type: BGA
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46V32M16BN-5B:F TR features a specific pin configuration that enables proper connectivity and functionality within electronic systems. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /DQM0
40. /DQM1
41. /DM
42. VSS

Functional Features

The MT46V32M16BN-5B:F TR offers the following functional features:

• High-speed data access: This chip provides fast read and write operations, enabling efficient data processing.
• Refresh mechanism: The DRAM chip incorporates an automatic refresh mechanism to maintain data integrity over time.
• Low power consumption: The MT46V32M16BN-5B:F TR is designed to minimize power consumption, making it suitable for battery-powered devices.
• Compatibility: This chip is compatible with various memory controllers and can be easily integrated into existing systems.

Advantages and Disadvantages

Advantages

• High-density storage capacity
• Fast data access speed
• Low power consumption
• Reliable performance

Disadvantages

• Vulnerable to data loss in case of power failure
• Requires periodic refresh cycles to maintain data integrity

Working Principles

The MT46V32M16BN-5B:F TR operates based on the principles of dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. To read or write data, the chip activates specific rows and columns within the matrix using control signals. The stored charge in the capacitors determines the logic state of each bit.

Detailed Application Field Plans

The MT46V32M16BN-5B:F TR finds extensive application in various electronic devices, including:

1. Personal computers
2. Laptops and notebooks
3. Servers and data centers
4. Mobile phones and tablets
5. Gaming consoles
6. Automotive electronics
7. Industrial automation systems

Detailed and Complete Alternative Models

1. MT46V32M16BN-5B: This is the non-TR version of the same DRAM