MT47H512M4THN-25E:H

Product Overview

Category

MT47H512M4THN-25E:H belongs to the category of semiconductor memory products.

Use

It is primarily used as a high-density synchronous dynamic random-access memory (SDRAM) module.

Characteristics

• High density: The MT47H512M4THN-25E:H offers a large storage capacity, allowing for efficient data storage and retrieval.
• Synchronous operation: It operates synchronously with the system clock, enabling faster data transfer rates.
• Low power consumption: This product is designed to consume minimal power, making it suitable for various applications.
• High-speed performance: With a maximum operating frequency of 400 MHz, it provides fast and reliable data access.

Package

The MT47H512M4THN-25E:H is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide high-density memory storage in a compact form factor, while ensuring efficient data transfer and low power consumption.

Packaging/Quantity

Each package of MT47H512M4THN-25E:H contains one SODIMM module.

Specifications

• Memory Type: SDRAM
• Capacity: 512 Megabytes (MB)
• Organization: 4 Megabits x 4 banks x 16 bits
• Operating Voltage: 2.5 Volts (V)
• Operating Frequency: Up to 400 Megahertz (MHz)
• CAS Latency: 2.5
• Refresh Rate: 7.8 µs (8192 cycles/64 ms)

Detailed Pin Configuration

The MT47H512M4THN-25E:H follows a standard pin configuration for SODIMM modules. The detailed pinout is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. VSS
45. CLK
46. CKE
47. ODT
48. VREF

Functional Features

• Burst Mode: The MT47H512M4THN-25E:H supports burst mode operation, allowing for consecutive data transfers without the need for individual commands.
• Auto Precharge: It automatically precharges the memory cells after a read or write operation, optimizing performance.
• On-Die Termination (ODT): This feature helps reduce signal reflections and improve signal integrity by terminating transmission lines on the memory module itself.
• Self-Refresh: The module can enter a self-refresh mode to conserve power when not actively accessed.

Advantages and Disadvantages

Advantages

• High-density storage capacity
• Fast data transfer rates
• Low power consumption
• Compact form factor

Disadvantages

• Limited compatibility with older systems that do not support SODIMM modules
• Relatively higher cost compared to lower-capacity memory modules

Working Principles

The MT47H512M4THN-25E:H operates based on the principles of synchronous dynamic random-access memory (SDRAM). It synchronizes its operations with the system clock, allowing for efficient data transfer between the memory module and the processor. The memory cells store data in a digital format using capacitors, which are periodically refreshed to maintain data integrity.

Detailed Application Field Plans

The MT47H512M4THN-25E:H is widely used in various applications that require high-density memory storage and fast data access. Some of the common application fields include:

1. Personal Computers: It is utilized in laptops and desktop computers to enhance their memory capacity and improve overall system performance.
2. Servers: The module finds extensive use in server systems where large amounts of data need to be processed simultaneously.
3. Networking Equipment: It is employed in routers, switches