MT47H64M8B6-3 IT:D TR

Product Overview

Category

The MT47H64M8B6-3 IT:D TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation: The MT47H64M8B6-3 IT:D TR offers fast read and write speeds, enabling efficient data processing.
• Large storage capacity: With a capacity of 64 megabits (8 megabytes), this memory device can store a significant amount of data.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT47H64M8B6-3 IT:D TR comes in a small form factor package, allowing for easy integration into various electronic systems.
• Reliable performance: It offers reliable data retention and endurance, ensuring the integrity of stored information.

Packaging/Quantity

The MT47H64M8B6-3 IT:D TR is typically packaged in surface mount technology (SMT) packages, such as ball grid array (BGA) or thin small outline package (TSOP). The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 64 Megabits x 8 bits
• Operating Voltage: 2.5V - 3.3V
• Clock Frequency: Up to 166 MHz
• Data Transfer Rate: Up to 333 Mbps
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA or TSOP

Detailed Pin Configuration

The MT47H64M8B6-3 IT:D TR has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. CKE
45. CK
46. VSS
47. DM0
48. DM1
49. VREF
50. VSS
51. ODT
52. VSS
53. VDD
54. VDD
55. VDD
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• Burst Mode: The MT47H64M8B6-3 IT:D TR supports burst mode operation, allowing for efficient sequential data access.
• Auto Precharge: It features an auto precharge function that optimizes memory performance by automatically precharging the memory cells after a read or write operation.
• On-Die Termination (ODT): This feature helps to reduce signal reflections and improve signal integrity by terminating the transmission lines on the memory chip itself.
• Self-Refresh Mode: The product supports a self-refresh mode, which allows it to retain data even when the power supply is disconnected.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into electronic systems.
• Reliable performance ensures data integrity.

Disadvantages

• Limited compatibility with certain older device architectures.
• Higher cost compared to some alternative memory technologies.

Working Principles

The MT47H64M8B6-3 IT:D TR operates based on synchronous dynamic random access memory (SDRAM) technology. It uses a clock signal to synchronize data transfers between the memory device and the host system. When a read or write command is issued, the memory controller sends the address and control signals to the memory device, which then accesses or stores the data