NAND128W3A0BN6F TR

Product Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile memory storage
• Characteristics: High-density, low-power consumption
• Package: Surface Mount Technology (SMT)
• Essence: NAND Flash memory chip
• Packaging/Quantity: Tape and reel, 3000 pieces per reel

Specifications

• Memory Capacity: 128 gigabits (16 gigabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The NAND128W3A0BN6F TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. GND
3. /CS
4. SCK
5. SI
6. SO
7. WP#
8. HOLD#
9. R/B#
10. A0
11. A1
12. A2
13. A3
14. A4
15. A5
16. A6
17. A7
18. A8
19. A9
20. A10
21. A11
22. A12
23. A13
24. A14
25. A15
26. A16
27. A17
28. A18
29. A19
30. A20
31. A21
32. A22
33. A23
34. A24
35. A25
36. A26
37. A27
38. A28
39. A29
40. A30
41. A31
42. /RE#
43. /WE#
44. CLE
45. ALE
46. CE#
47. NC
48. NC

Functional Features

• High-speed data transfer rate
• Error correction code (ECC) support
• Block erase and page program operations
• Internal data organization with multiple planes and blocks
• Wear-leveling algorithm for extended lifespan
• Power-saving features such as deep power-down mode

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer rate - Low power consumption - Reliable data retention - Compact package size

Disadvantages: - Limited endurance compared to other memory technologies - Higher cost per gigabyte compared to traditional hard drives

Working Principles

The NAND128W3A0BN6F TR is based on NAND Flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The memory cells are arranged in blocks, which can be individually erased or programmed.

To read data from the NAND chip, the controller sends commands and addresses through the SPI interface. The chip responds by providing the requested data. During programming or erasing operations, the controller sends the appropriate commands and data to modify the contents of the memory cells.

Detailed Application Field Plans

The NAND128W3A0BN6F TR is commonly used in various electronic devices that require non-volatile storage, including:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Memory cards (SD, microSD, etc.)
4. Embedded systems
5. Industrial control systems
6. Automotive electronics
7. Consumer electronics (smartphones, tablets, etc.)

Alternative Models

Here are some alternative models that offer similar functionality:

1. NAND64W3A0BN6F TR - 64 gigabit (8 gigabyte) capacity
2. NAND256W3A0BN6F TR - 256 gigabit (32 gigabyte) capacity
3. NAND512W3A0BN6F TR - 512 gigabit (64 gigabyte) capacity

These alternative models can be considered based on specific storage requirements and cost considerations.

Word count: 420 words