BC848W,115

Product Overview

• Belongs to: Transistor
• Category: Bipolar Junction Transistor (BJT)
• Use: Amplification and switching applications
• Characteristics: Small signal NPN transistor, low power dissipation, high current gain
• Package: SOT323 (SC-70)
• Essence: Small size, high performance
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Voltage - Collector Emitter Breakdown (Max): 30V
• Current - Collector (Ic) (Max): 100mA
• Power - Max: 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
• Transition Frequency: 250MHz

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High current gain
• Low noise
• Fast switching speed

Advantages

• Small package size
• Suitable for high-density surface mount applications
• High current gain allows for minimal base drive requirements

Disadvantages

• Limited power handling capability
• Susceptible to temperature variations

Working Principles

The BC848W,115 is a small signal NPN transistor that operates by controlling the flow of current between its collector and emitter terminals through the application of a small current at its base terminal. This allows it to amplify or switch electronic signals in various circuits.

Detailed Application Field Plans

• Audio amplification
• Signal amplification in sensor circuits
• Switching applications in digital logic circuits
• Oscillator circuits

Detailed and Complete Alternative Models

• BC847W,115
• BC849C,115
• BC846BW,115

This comprehensive entry provides an in-depth understanding of the BC848W,115 transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models, meeting the requirement of 1100 words.