Nexperia USA Inc.
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BCW60D,215
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BCW60D,215

Product Overview

Category

The BCW60D,215 belongs to the category of NPN Silicon RF Transistor.

Use

It is commonly used in high-frequency applications such as RF amplifiers and oscillators.

Characteristics

  • High frequency capability
  • Low noise figure
  • High power gain

Package

The BCW60D,215 comes in a SOT-23 package.

Essence

This transistor is essential for amplifying and processing high-frequency signals in various electronic devices.

Packaging/Quantity

The BCW60D,215 is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Collector-Base Voltage (VCBO): 45V
  • Collector-Emitter Voltage (VCEO): 45V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 250mW
  • Transition Frequency (fT): 6GHz

Detailed Pin Configuration

The BCW60D,215 has three pins: 1. Base (B) 2. Collector (C) 3. Emitter (E)

Functional Features

  • High-frequency amplification
  • Low noise operation
  • Small signal amplification

Advantages

  • High power gain
  • Low noise figure
  • Suitable for high-frequency applications

Disadvantages

  • Limited collector current
  • Limited power dissipation

Working Principles

The BCW60D,215 operates based on the principles of NPN bipolar junction transistors, where the flow of current is controlled by the voltage applied at the base terminal.

Detailed Application Field Plans

The BCW60D,215 is widely used in: - Radio frequency amplifiers - Oscillators - Signal processing circuits

Detailed and Complete Alternative Models

Some alternative models to BCW60D,215 include: - BCW60D,116 - BCW60D,235 - BCW60D,264

In conclusion, the BCW60D,215 is a high-frequency NPN Silicon RF Transistor with excellent power gain and low noise figure, making it suitable for various RF applications.

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Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням BCW60D,215 у технічних рішеннях

  1. What is BCW60D,215?

    • BCW60D,215 is a common-emitter NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

  2. What are the key specifications of BCW60D,215?

    • The key specifications include a maximum collector current of 100mA, a maximum collector-base voltage of 45V, and a maximum power dissipation of 250mW.

  3. What are the typical applications of BCW60D,215?

    • Typical applications include audio amplification, signal amplification, and low-power switching circuits.

  4. What is the pin configuration of BCW60D,215?

    • BCW60D,215 has three pins: the emitter (E), the base (B), and the collector (C).

  5. What is the operating temperature range of BCW60D,215?

    • The operating temperature range is typically from -55°C to 150°C.

  6. What are the recommended operating conditions for BCW60D,215?

    • It is recommended to operate BCW60D,215 within the specified temperature range and to ensure that the maximum ratings for current, voltage, and power dissipation are not exceeded.

  7. Can BCW60D,215 be used for high-frequency applications?

    • BCW60D,215 is not specifically designed for high-frequency applications, but it can be used in low to moderate frequency circuits.

  8. What are the alternatives to BCW60D,215?

    • Alternatives include other NPN transistors with similar or compatible specifications, such as BC547, 2N2222, or 2N3904.

  9. How should BCW60D,215 be handled and stored?

    • BCW60D,215 should be handled with proper ESD precautions and stored in anti-static packaging to prevent damage from electrostatic discharge.

  10. Where can I find detailed technical information about BCW60D,215?

    • Detailed technical information can be found in the datasheet provided by the manufacturer or on their official website.