PBSS4112PANP,115

Product Overview

• Category: Transistor
• Use: Switching applications
• Characteristics: High current capability, low voltage drop
• Package: SOT1061 (SC-74)
• Essence: NPN bipolar junction transistor
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Collector-Base Voltage (VCBO): 50V
• Collector Current (IC): 1A
• Power Dissipation (Ptot): 625mW
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

• Pin 1 (Emitter): Connects to the emitter region of the transistor
• Pin 2 (Base): Connects to the base region of the transistor
• Pin 3 (Collector): Connects to the collector region of the transistor

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed

Advantages and Disadvantages

• Advantages:
  • Suitable for high-speed switching applications
  • Small package size
  • Low power dissipation
• Disadvantages:
  • Limited maximum voltage and current ratings
  • Sensitivity to overvoltage conditions

Working Principles

The PBSS4112PANP,115 operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a much larger current flowing between the collector and emitter terminals, allowing it to act as a switch or amplifier in electronic circuits.

Detailed Application Field Plans

This transistor is commonly used in various electronic devices such as power supplies, LED lighting, motor control, and audio amplifiers. Its fast switching speed and low power dissipation make it suitable for applications requiring efficient energy usage and high-speed operation.

Detailed and Complete Alternative Models

• Alternative Model 1: PBSS4350X,115
• Alternative Model 2: PBSS5360T,115
• Alternative Model 3: PBSS6350T,115

Note: The alternative models listed above offer similar characteristics and are compatible with the PBSS4112PANP,115 for various applications.

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This entry provides comprehensive information about the PBSS4112PANP,115 transistor, including its basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.