MRF6S18140HSR5

Product Overview

The MRF6S18140HSR5 belongs to the category of RF Power Field Effect Transistors (FETs) and is commonly used in high-frequency applications such as wireless infrastructure, radar systems, and industrial, scientific, and medical (ISM) applications. This transistor exhibits high power gain, efficiency, and ruggedness, making it suitable for demanding RF power amplifier designs. The package type is a NI-780, and it is typically available in tape and reel packaging with a quantity of 500 units per reel.

Specifications

• Frequency Range: 1.81 - 1.88 GHz
• Output Power: 14 W
• Gain: 15 dB
• Efficiency: 55%
• Package Type: NI-780
• Packaging: Tape and Reel
• Quantity: 500 units per reel

Detailed Pin Configuration

The MRF6S18140HSR5 features a 3-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High Power Gain: Provides significant amplification of input signals.
• High Efficiency: Converts a large portion of input power into output power.
• Ruggedness: Capable of withstanding high voltage and power levels without degradation.

Advantages and Disadvantages

Advantages

• High power gain and efficiency
• Rugged design for reliable performance in demanding environments
• Wide frequency range for versatile applications

Disadvantages

• Limited to specific frequency range
• Higher cost compared to lower power transistors

Working Principles

The MRF6S18140HSR5 operates based on the principles of field effect transistors, utilizing an electric field to control the conductivity of a channel in the semiconductor material. When a voltage is applied to the gate terminal, it modulates the conductivity between the drain and source, allowing for amplification of RF signals.

Detailed Application Field Plans

The MRF6S18140HSR5 is well-suited for various applications including: - Wireless infrastructure: Power amplifiers for base stations and repeaters - Radar systems: Transmitting and receiving RF signals for target detection - ISM applications: Industrial, scientific, and medical equipment requiring high-power RF amplification

Detailed and Complete Alternative Models

• MRF6S18140HR5: Similar specifications but with a different package type (NI-1230)
• MRF6S18140H: Lower power version with 8 W output power

In conclusion, the MRF6S18140HSR5 is a high-performance RF power FET designed for applications requiring high power gain, efficiency, and ruggedness within the 1.81 - 1.88 GHz frequency range.

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