NXP USA Inc.
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MRF7S27130HSR3
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MRF7S27130HSR3

Product Overview

Category

The MRF7S27130HSR3 belongs to the category of high-power RF transistors.

Use

It is used in high-frequency applications such as radar systems, communication equipment, and industrial heating processes.

Characteristics

  • High power handling capability
  • Broadband frequency range
  • High efficiency
  • Reliable performance under extreme conditions

Package

The MRF7S27130HSR3 is typically available in a ceramic package with metal flange for efficient heat dissipation.

Essence

This transistor is essential for amplifying and transmitting high-frequency signals in various electronic systems.

Packaging/Quantity

The MRF7S27130HSR3 is usually packaged individually and comes in varying quantities based on customer requirements.

Specifications

  • Frequency Range: 2.5 GHz to 2700 MHz
  • Power Output: 130 Watts
  • Voltage Rating: 50 Volts
  • Gain: 15 dB
  • Efficiency: 60%

Detailed Pin Configuration

The MRF7S27130HSR3 features a 4-pin configuration: 1. Gate 2. Drain 3. Source 4. Ground

Functional Features

  • High linearity
  • Excellent thermal stability
  • Low distortion
  • Wide operating voltage range

Advantages and Disadvantages

Advantages

  • High power output
  • Wide frequency coverage
  • Reliable performance in harsh environments

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal management due to high power dissipation

Working Principles

The MRF7S27130HSR3 operates based on the principles of field-effect transistors (FETs), where the input signal at the gate terminal controls the flow of current between the drain and source terminals, resulting in amplification of the high-frequency signals.

Detailed Application Field Plans

The MRF7S27130HSR3 is widely used in: - Radar systems for long-range detection - Communication transmitters for high-speed data transmission - Industrial heating equipment for RF induction heating processes

Detailed and Complete Alternative Models

Some alternative models to the MRF7S27130HSR3 include: - MRF7S21170HSR3 - MRF7S38010HR3 - MRF6S21140H

In conclusion, the MRF7S27130HSR3 is a high-power RF transistor that offers exceptional performance in amplifying and transmitting high-frequency signals across various applications, making it an essential component in modern electronic systems.

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Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням MRF7S27130HSR3 у технічних рішеннях

  1. What is the MRF7S27130HSR3?

    • The MRF7S27130HSR3 is a high-power RF transistor designed for use in applications such as base stations, wireless infrastructure, and other RF power amplification systems.

  2. What is the maximum power output of the MRF7S27130HSR3?

    • The MRF7S27130HSR3 has a maximum power output of 130 watts, making it suitable for high-power RF amplification requirements.

  3. What frequency range does the MRF7S27130HSR3 cover?

    • The MRF7S27130HSR3 covers a frequency range of 728-960 MHz, making it ideal for cellular and wireless communication applications.

  4. What are the key features of the MRF7S27130HSR3?

    • The key features of the MRF7S27130HSR3 include high power gain, high efficiency, and excellent linearity, making it well-suited for demanding RF power amplification needs.

  5. What are the typical applications for the MRF7S27130HSR3?

    • Typical applications for the MRF7S27130HSR3 include base station power amplifiers, wireless infrastructure, and other high-power RF amplification systems.

  6. What are the recommended operating conditions for the MRF7S27130HSR3?

    • The MRF7S27130HSR3 operates under typical supply voltages of 28V and at frequencies within the specified range of 728-960 MHz.

  7. Does the MRF7S27130HSR3 require any special cooling or heat dissipation considerations?

    • Yes, due to its high power output, the MRF7S27130HSR3 may require appropriate thermal management solutions such as heatsinking or active cooling.

  8. Is the MRF7S27130HSR3 compatible with standard RF amplifier circuit designs?

    • Yes, the MRF7S27130HSR3 is designed to be compatible with standard RF amplifier circuit designs, making it relatively easy to integrate into existing systems.

  9. What are the typical performance characteristics of the MRF7S27130HSR3?

    • Typical performance characteristics include high power gain, low distortion, and high efficiency, all of which contribute to its suitability for high-power RF applications.

  10. Where can I find detailed technical specifications and application notes for the MRF7S27130HSR3?

    • Detailed technical specifications and application notes for the MRF7S27130HSR3 can be found in the product datasheet provided by the manufacturer, as well as in relevant technical literature and application guides.