NXP USA Inc.
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MRF9180R6
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MRF9180R6

Introduction

The MRF9180R6 is a high-frequency, RF power field-effect transistor (FET) designed for use in applications requiring high power and efficiency at frequencies up to 2.5 GHz.

Basic Information Overview

  • Category: RF Power Field-Effect Transistor
  • Use: High-power RF amplification in applications such as base stations, broadcast transmitters, and radar systems.
  • Characteristics: High power, high efficiency, and wide frequency range.
  • Package: SOT-1118B
  • Essence: High-performance RF amplification for demanding applications.
  • Packaging/Quantity: Available in tape and reel packaging with quantities tailored to customer requirements.

Specifications

  • Frequency Range: Up to 2.5 GHz
  • Power Output: Typically 18W
  • Efficiency: Typically 55%
  • Voltage: 28V
  • Gain: 15dB

Detailed Pin Configuration

The MRF9180R6 features a 4-pin configuration: 1. Gate 2. Drain 3. Source 4. Ground

Functional Features

  • High power output for demanding RF applications
  • Wide frequency range for versatile use
  • High efficiency for reduced power consumption
  • Robust construction for reliability in harsh environments

Advantages and Disadvantages

Advantages

  • High power output
  • Wide frequency range
  • High efficiency
  • Robust construction

Disadvantages

  • Higher cost compared to lower-power alternatives
  • Requires careful handling and thermal management due to high power dissipation

Working Principles

The MRF9180R6 operates on the principle of amplifying RF signals by controlling the flow of current between the drain and source terminals using the gate voltage. This amplification process enables the device to deliver high-power RF signals with high efficiency.

Detailed Application Field Plans

The MRF9180R6 is ideally suited for use in the following applications: - Base stations for cellular and wireless communication networks - Broadcast transmitters for radio and television - Radar systems for defense and surveillance

Detailed and Complete Alternative Models

  • MRF9045NR1: Lower power output but suitable for cost-sensitive applications
  • MRF21120: Higher power output for ultra-high-power RF applications
  • MRF13750H: Medium power output with extended frequency range for diverse applications

In conclusion, the MRF9180R6 offers high power, efficiency, and versatility, making it an ideal choice for demanding RF amplification applications across various industries.

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Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням MRF9180R6 у технічних рішеннях

  1. What is the MRF9180R6?

    • The MRF9180R6 is a high-power RF transistor designed for use in applications such as industrial, scientific, and medical (ISM) equipment, as well as broadcast and aerospace systems.

  2. What is the maximum power output of the MRF9180R6?

    • The MRF9180R6 can deliver up to 18 watts of power output in the frequency range of 920-960 MHz.

  3. What are the typical applications for the MRF9180R6?

    • Typical applications for the MRF9180R6 include RF power amplifiers for wireless infrastructure, such as base stations and small cells, as well as industrial heating and plasma generation systems.

  4. What is the operating voltage range for the MRF9180R6?

    • The MRF9180R6 operates within a voltage range of 12-28 volts.

  5. What is the typical gain of the MRF9180R6?

    • The MRF9180R6 typically provides a gain of around 14 dB.

  6. What thermal management considerations should be taken into account when using the MRF9180R6?

    • Proper heat sinking and thermal management are crucial for maintaining the performance and reliability of the MRF9180R6, especially in high-power applications.

  7. Is the MRF9180R6 suitable for pulsed operation?

    • Yes, the MRF9180R6 is designed to handle pulsed operation, making it suitable for radar and other pulse-based systems.

  8. What are the key electrical characteristics of the MRF9180R6?

    • Key electrical characteristics include high efficiency, excellent linearity, and robustness in demanding RF power amplifier applications.

  9. Are there any specific matching or biasing requirements for the MRF9180R6?

    • Proper impedance matching and biasing are essential for optimizing the performance of the MRF9180R6 in a given application. Consult the datasheet for detailed guidance.

  10. Where can I find additional technical support or documentation for the MRF9180R6?

    • Additional technical support and documentation for the MRF9180R6 can be obtained from the manufacturer's website, authorized distributors, or through direct contact with their technical support team.